• Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells(1703.03198)

We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque operated memories. We study the influence of the boron content in MgO / FeCoB /Ta systems alloys on their Gilbert damping after crystallization annealing. Increasing the boron content from 20 to 30\% increases the crystallization temperature, thereby postponing the onset of elemental diffusion within the free layer. This reduction of the interdiffusion of the Ta atoms helps maintaining the Gilbert damping at a low level of 0.009 without any penalty on the anisotropy and the magneto-transport properties up to the 400$^\circ$C annealing required in CMOS back-end of line processing. In addition, we show that dual MgO free layers of composition MgO/FeCoB/Ta/FeCoB/MgO have a substantially lower damping than their MgO/FeCoB/Ta counterparts, reaching damping parameters as low as 0.0039 for a 3 \r{A} thick Tantalum spacer. This confirms that the dominant channel of damping is the presence of Ta impurities within the FeCoB alloy. On optimized tunnel junctions, we then study the duration of the switching events induced by spin-transfer-torque. We focus on the sub-threshold thermally activated switching in optimal applied field conditions. From the electrical signatures of the switching, we infer that once the nucleation has occurred, the reversal proceeds by a domain wall sweeping though the device at a few 10 m/s. The smaller the device, the faster its switching. We present an analytical model to account for our findings. The domain wall velocity is predicted to scale linearly with the current for devices much larger than the wall width. The wall velocity depends on the Bloch domain wall width, such that the devices with the lowest exchange stiffness will be the ones that host the domain walls with the slowest mobilities.
• From lepton interactions to hadron and nuclear ones at high multiplicity(1703.05633)

March 16, 2017 hep-ph, hep-ex
Multiplicity data up to 200 GeV in e+e- annihilation are described well by the two-stage model based on pQCD and suggested the phenomenological scheme of hadronization. This model confirms the fragmentation mechanism of hadronization (in vacuum). It allows to estimate mean multiplicity at 500 GeV and 1 TeV. Gluon dominance model is the modification of this model for the description of hadronic interactions. It was realised by an inclusion of gluons. It demonstrates very strong evidence of the recombination mechanism of hadronization. In this case, the mean multiplicity of hadrons formed from a single gluon grows with energy and it exceeds the corresponding values for lepton interactions. At the same time, the region of high multiplicity is stipulated for splitting of active gluons. The excess of soft photon yield is experimentally confirmed at Nuclotron (JINR) in the interactions of the 3.5A GeV/c deuteron and lithium beams with the carbon target.
• Size-dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions(1607.00260)

We time-resolve the spin-transfer-torque-induced switching in perpendicularly magnetized tunnel junctions of diameters from 50 to 250 nm in the thermally activated regime. When the field and the spin-torque concur to favor the P to AP transition, the reversal yields monotonic resistance ramps that can be interpreted as a domain wall propagation through the device at velocities of 17 to 30 nm/ns; smaller cells switch hence faster. When the field hinders the P to AP transition, the switching is preceded by repetitive switching attempts, during which the resistance transiently increases until successful reversal occurs. At 50 nm, the P to AP switching proceeds reproducibly in 3 ns, with a monotonic increase of the device resistance. In the reverse transition (AP to P), several reversal paths are possible even in the smallest junctions. Besides, the non uniform nature of the response seems still present at nanoscale, with sometimes electrical signatures of strong disorder during the reversal. The AP to P transition is preceded by a strong instability of the AP state in devices above 100 nm. The resistance becomes extremely agitated before switching to P in a path yielding a slow (20-50 ns) irregular increase of the conductance with variability. Unreversed bubbles of 60 nm can persist a few microseconds in the largest junctions. The complexity of the AP to P switching is reduced but not suppressed when the junctions are downsized below 60 nm. The instability of the initial AP state is no longer detected but the other features remain. In the smallest junctions (50 nm) we occasionally observe much faster (sub-1 ns) switching events. We discuss the origin of the switching asymmetry and its size dependence, with an emphasis on the role of the non uniformities of the stray field emanating from the reference layers, which affects the zones in which nucleation is favored.
• Soft photon registration at Nuclotron(1510.00517)

Oct. 2, 2015 nucl-ex
First results of a soft photon yield in nucleus-nuclear interactions at 3.5 GeV per nucleon are presented. These photons have been registered at Nuclotron (LHEP, JINR) by an electromagnetic calorimeter built in the SVD Collaboration. The obtained spectra confirm the excess yield in the energy region less than 50 MeV in comparison with theoretical predictions and agree with previous experiments at high-energy interactions.
• Matching domain wall configuration and spin-orbit torques for very efficient domain-wall motion(1210.3049)

Oct. 10, 2012 cond-mat.mtrl-sci
In our numerical study, we identify the best conditions for efficient domain wall motion by spin-orbit torques originating from the Spin Hall effect or Rashba effect. We demonstrate that the effect depends critically on the domain wall configuration, the current injection scheme and the symmetry of the spin-orbit torque. The best identified configuration corresponds to a N\'eel wall driven by spin Hall Effect in a narrow strip with perpendicular magnetic anisotropy. In this case, the domain wall velocity can be a factor of 10 larger than that for the conventional current-in-plane spin-transfer torque.
• New results of the extreme multiplicity studies(0911.5659)

Nov. 30, 2009 hep-ex
Extreme multiplicity studies at 50 GeV in pp interactions are discussed. Preliminary multiplicity distributions at U-70 (IHEP, Protvino) energy have been obtained for more than 20 charged particles. A new elaborated algorithm for the track reconstruction in a drift tube tracker and magnetic spectrometer, has been checked . The collective behavior of secondary particles is manifested in these interactions in the extreme multiplicity region. For the first time the ring events in pp interactions have been observed in this region. A possibility of detecting the Bose-Einstein condensation detection is discussed.
• The status and physics program of the Spectrometer with Vertex Detector(hep-ex/0510073)

Oct. 27, 2005 hep-ex
The brief history, physics program and the current status of the SVD-2 detector is presented. The future plans for the experiments with upgraded SVD-2M setup is discussed.