The possibility of the composition control of the GaAs1-xPx solid solution on the GaAs substrate at liquid phase electroepitaxy from the Ga-As-P solution-melt is theoretically considered. By the simulation it was determined, that under steady-state conditions specifying such parameters of the process as the temperature and/or the thickness of the growth space it is possible to obtain graded bandgap layers of the GaAs1-xPx solid solution with increasing of the content of P towards the surface of the layer that possess the composition gradient from 0.5x10-4 mole fraction/nm to 2.0x10-3 mole fraction/nm. It was also shown that control of the composition of ternary solid solutions at liquid phase electroepitaxy can be realized by use of unsteady state electric field.

The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage characteristics of the test diodes were measured in the temperature range of 80 / 520K and their basic technical characteristics were determined. An availability of application of the structures developed as sensing elements of high-temperature heat sensors was shown.

An approved experiment at the internal proton beam of the JINR nuclotron on a search for eta-mesic nuclei in the reaction pA --> np + eta(A-1) --> np + pi-p + X is briefly presented.