The possibility of the composition control of the GaAs1-xPx solid solution on
the GaAs substrate at liquid phase electroepitaxy from the Ga-As-P
solution-melt is theoretically considered. By the simulation it was determined,
that under steady-state conditions specifying such parameters of the process as
the temperature and/or the thickness of the growth space it is possible to
obtain graded bandgap layers of the GaAs1-xPx solid solution with increasing of
the content of P towards the surface of the layer that possess the composition
gradient from 0.5x10-4 mole fraction/nm to 2.0x10-3 mole fraction/nm. It was
also shown that control of the composition of ternary solid solutions at liquid
phase electroepitaxy can be realized by use of unsteady state electric field.
The technique of obtaining of p+-n-type gallium phosphide diode epitaxial
structures from liquid phase was developed as well as pilot samples of diode
temperature sensors were fabricated based on them. Thermometric and
current-voltage characteristics of the test diodes were measured in the
temperature range of 80 / 520K and their basic technical characteristics were
determined. An availability of application of the structures developed as
sensing elements of high-temperature heat sensors was shown.
An approved experiment at the internal proton beam of the JINR nuclotron on a
search for eta-mesic nuclei in the reaction pA --> np + eta(A-1) --> np + pi-p
+ X is briefly presented.