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The possibility of the composition control of the GaAs1-xPx solid solution on
the GaAs substrate at liquid phase electroepitaxy from the Ga-As-P
solution-melt is theoretically considered. By the simulation it was determined,
that under steady-state conditions specifying such parameters of the process as
the temperature and/or the thickness of the growth space it is possible to
obtain graded bandgap layers of the GaAs1-xPx solid solution with increasing of
the content of P towards the surface of the layer that possess the composition
gradient from 0.5x10-4 mole fraction/nm to 2.0x10-3 mole fraction/nm. It was
also shown that control of the composition of ternary solid solutions at liquid
phase electroepitaxy can be realized by use of unsteady state electric field.
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The technique of obtaining of p+-n-type gallium phosphide diode epitaxial
structures from liquid phase was developed as well as pilot samples of diode
temperature sensors were fabricated based on them. Thermometric and
current-voltage characteristics of the test diodes were measured in the
temperature range of 80 / 520K and their basic technical characteristics were
determined. An availability of application of the structures developed as
sensing elements of high-temperature heat sensors was shown.
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An approved experiment at the internal proton beam of the JINR nuclotron on a
search for eta-mesic nuclei in the reaction pA --> np + eta(A-1) --> np + pi-p
+ X is briefly presented.