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Soft-X-ray ARPES (SX-ARPES) with its enhanced probing depth and chemical
specificity allows access to fundamental electronic structure characteristics -
momentum-resolved spectral function, band structure, Fermi surface - of systems
difficult and even impossible for the conventional ARPES such as
three-dimensional materials, buried interfaces and impurities. After a recap of
the spectroscopic abilities of SX-ARPES, we review its applications to oxide
interfaces, focusing on the paradigm LaAlO3-SrTiO3 interface. Resonant SX-ARPES
at the Ti L-edge accentuates photoemission response of the mobile interface
electrons and exposes their dxy-, dyz- and dxz-derived subbands forming the
Fermi surface in the interface quantum well. After a recap of the
electron-phonon interaction physics, we demonstrate that peak-dip-hump
structure of the experimental spectral function manifests the Holstein-type
large polaron nature of the interface charge carriers, explaining their
fundamentally reduced mobility. Coupling of the charge carriers to polar soft
phonon modes defines dramatic drop of mobility with temperature. Oxygen
deficiency adds another dimension to the rich physics of LaAlO3-SrTiO3
resulting from co-existence of mobile and localized electrons introduced by
oxygen vacancies. Oxygen deficiency allows tuning of the polaronic coupling and
thus mobility of the charge carriers, as well as of interfacial ferromagnetism
connected with various atomic configurations of the vacancies. Finally, we
discuss spectroscopic evidence of phase separation at the LaAlO3-SrTiO3
interface. Concluding, we put prospects of SX-ARPES for complex
heterostructures, spin-resolving experiments opening the totally unexplored
field of interfacial spin structure, and in-operando field-effect experiments
paving the way towards device applications of the reach physics of oxide
interfaces.
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Resonant inelastic X-ray scattering (RIXS) experiments performed at the
oxygen-$K$ edge on the iridate perovskites {\SIOS} and {\SION} reveal a
sequence of well-defined dispersive modes over the energy range up to $\sim
0.8$ eV. The momentum dependence of these modes and their variation with the
experimental geometry allows us to assign each of them to specific collective
magnetic and/or electronic excitation processes, including single and
bi-magnons, and spin-orbit and electron-hole excitons. We thus demonstrated
that dispersive magnetic and electronic excitations are observable at the O-$K$
edge in the presence of the strong spin-orbit coupling in the $5d$ shell of
iridium and strong hybridization between Ir $5d$ and O $2p$ orbitals, which
confirm and expand theoretical expectations. More generally, our results
establish the utility of O-$K$ edge RIXS for studying the collective
excitations in a range of $5d$ materials that are attracting increasing
attention due to their novel magnetic and electronic properties. Especially,
the strong RIXS response at O-$K$ edge opens up the opportunity for
investigating collective excitations in thin films and heterostructures
fabricated from these materials.
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We combine low energy muon spin rotation (LE-$\mu$SR) and soft-X-ray
angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and
electronic properties of magnetically doped topological insulators based on
(Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction in
samples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at doping levels x $\gtrsim$ 0.16.
The observed magnetic transition is not sharp in temperature indicating a
gradual magnetic ordering. We find that the evolution of magnetic ordering is
consistent with formation of ferromagnetic islands which increase in number
and/or volume with decreasing temperature. Resonant ARPES at the V $L_3$-edge
reveals a nondispersing impurity band close to the Fermi level as well as V
weight integrated into the host band structure. Calculations within the
coherent potential approximation of the V contribution to the spectral function
confirm that this impurity band is caused by V in substitutional sites. The
implications on the observation of the quantum anomalous Hall effect at mK
temperatures are discussed.
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The angle-resolved photoemission spectra of the superconductor
(Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ have been investigated both experimentally and
theoretically. Our results explain the previously obscured origins of all
salient features of the ARPES response of this paradigm pnictide compound and
reveal the origin of the Lifshitz transition. Comparison of calculated ARPES
spectra with the underlying DMFT band structure shows an important impact of
final state effects, which results for three-dimensional states in a deviation
of the ARPES spectra from the true spectral function. In particular, the
apparent effective mass enhancement seen in the ARPES response is not an
entirely intrinsic property of the quasiparticle valence bands but may have a
significant extrinsic contribution from the photoemission process and thus
differ from its true value. Because this effect is more pronounced for low
photoexcitation energies, soft-X-ray ARPES delivers more accurate values of the
mass enhancement due to a sharp definition of the 3D electron momentum.
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Engineered lattices in condensed matter physics, such as cold atom optical
lattices or photonic crystals, can have fundamentally different properties from
naturally-occurring electronic crystals. Here, we report a novel type of
artificial quantum matter lattice. Our lattice is a multilayer heterostructure
built from alternating thin films of topological and trivial insulators. Each
interface within the heterostructure hosts a set of topologically-protected
interface states, and by making the layers sufficiently thin, we demonstrate
for the first time a hybridization of interface states across layers. In this
way, our heterostructure forms an emergent atomic chain, where the interfaces
act as lattice sites and the interface states act as atomic orbitals, as seen
from our measurements by angle-resolved photoemission spectroscopy (ARPES). By
changing the composition of the heterostructure, we can directly control
hopping between lattice sites. We realize a topological and a trivial phase in
our superlattice band structure. We argue that the superlattice may be
characterized in a significant way by a one-dimensional topological invariant,
closely related to the invariant of the Su-Schrieffer-Heeger model. Our
topological insulator heterostructure demonstrates a novel experimental
platform where we can engineer band structures by directly controlling how
electrons hop between lattice sites.
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The electronic structure of \graySn(001) thin films strained compressively
in-plane was studied both experimentally and theoretically. A new topological
surface state (TSS) located entirely within the gapless projected bulk bands is
revealed by \textit{ab initio}-based tight-binding calculations as well as
directly accessed by soft X-ray angle-resolved photoemission. The topological
character of this state, which is a surface resonance, is confirmed by
unravelling the band inversion and by calculating the topological invariants.
In agreement with experiment, electronic structure calculations show the
maximum density of states in the subsurface region, while the already
established TSS near the Fermi level is strongly localized at the surface. Such
varied behavior is explained by the differences in orbital composition between
the specific TSS and its associated bulk states, respectively. This provides an
orbital protection mechanism for topological states against mixing with the
background of bulk bands.
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We measured dispersive spin excitations in $\mathrm{SmFeAsO}$, parent
compound of $\mathrm{SmFeAsO_{\text{1-x}}F_{\text{x}}}$ one of the highest
temperature superconductors of Fe pnictides (T$_{\text{C}}\approx$55~K). We
determine the magnetic excitations to disperse with a bandwidth energy of ca
170 meV at (0.47, 0) and (0.34, 0.34), which merges into the elastic line
approaching the $\Gamma$ point. Comparing our results with other parent Fe
pnictides, we show the importance of structural parameters for the magnetic
excitation spectrum, with small modifications of the tetrahedron angles and As
height strongly affecting the magnetism.
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We have used Resonant Inelastic X-ray Scattering (RIXS) and dynamical
susceptibility calculations to study the magnetic excitations in
NaFe$_{1-x}$Co$_x$As (x = 0, 0.03, and 0.08). Despite a relatively low ordered
magnetic moment, collective magnetic modes are observed in parent compounds (x
= 0) and persist in optimally (x = 0.03) and overdoped (x = 0.08) samples.
Their magnetic bandwidths are unaffected by doping within the range
investigated. High energy magnetic excitations in iron pnictides are robust
against doping, and present irrespectively of the ordered magnetic moment.
Nevertheless, Co doping slightly reduces the overall magnetic spectral weight,
differently from previous studies on hole-doped BaFe$_{2}$As$_{2}$, where it
was observed constant. Finally, we demonstrate that the doping evolution of
magnetic modes is different for the dopants being inside or outside the Fe-As
layer.
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Clarification of the position of the Fermi level ($E_\mathrm{F}$) is
important in understanding the origin of ferromagnetism in the prototypical
ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent
publication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], have
investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using
angle-resolved photoemission spectroscopy (ARPES), and concluded that
$E_\mathrm{F}$ is located in the valence band (VB). However, this conclusion
contradicts a number of recent experimental results for GaMnAs, which showed
that $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB).
Here, we show an alternative interpretation of their ARPES experiments, which
is consistent with those recent experiments and supports the picture that
$E_\mathrm{F}$ is located above the VB maximum in the IB.
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The metal-insulator transitions and the intriguing physical properties of
rare-earth perovskite nickelates have attracted considerable attention in
recent years. Nonetheless, a complete understanding of these materials remains
elusive. Here, taking a NdNiO3 thin film as a representative example, we
utilize a combination of x-ray absorption and resonant inelastic x-ray
scattering (RIXS) spectroscopies to resolve important aspects of the complex
electronic structure of the rare-earth nickelates. The unusual coexistence of
bound and continuum excitations observed in the RIXS spectra provides strong
evidence for the abundance of oxygen 2p holes in the ground state of these
materials. Using cluster calculations and Anderson impurity model
interpretation, we show that these distinct spectral signatures arise from a Ni
3d8 configuration along with holes in the oxygen 2p valence band, confirming
suggestions that these materials do not obey a conventional positive
charge-transfer picture, but instead exhibit a negative charge-transfer energy,
in line with recent models interpreting the metal to insulator transition in
terms of bond disproportionation.
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We report theoretical and experimental discovery of Lorentz-violating Weyl
fermion semimetal type-II state in the LaAlGe class of materials. Previously
type-II Weyl state was predicted in WTe2 materials which remains unrealized in
surface experiments. We show theoretically and experimentally that LaAlGe class
of materials are the robust platforms for the study of type-II Weyl physics.
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Silicon spintronics requires injection of spin-polarized carriers into Si. An
emerging approach is direct electrical injection from a ferromagnetic
semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin
contact is determined by the interface band alignment. In particular, the band
offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to
probe the electronic structure of the buried EuO/Si interface with momentum
resolution and chemical specificity. The band structure reveals a conduction
band offset of 1.0 eV attesting the technological potential of the EuO/Si
system.
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Strongly correlated insulators are broadly divided into two classes:
Mott-Hubbard insulators, where the insulating gap is driven by the Coulomb
repulsion $U$ on the transition-metal cation, and charge-transfer insulators,
where the gap is driven by the charge transfer energy $\Delta$ between the
cation and the ligand anions. The relative magnitudes of $U$ and $\Delta$
determine which class a material belongs to, and subsequently the nature of its
low-energy excitations. These energy scales are typically understood through
the local chemistry of the active ions. Here we show that the situation is more
complex in the low-dimensional charge transfer insulator
Li$_\mathrm{2}$CuO$_\mathrm{2}$, where $\Delta$ has a large non-electronic
component. Combining resonant inelastic x-ray scattering with detailed
modeling, we determine how the elementary lattice, charge, spin, and orbital
excitations are entangled in this material. This results in a large
lattice-driven renormalization of $\Delta$, which significantly reshapes the
fundamental electronic properties of Li$_\mathrm{2}$CuO$_\mathrm{2}$.
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We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with
strength larger than the bulk gap, caused by neon sputtering and nonmagnetic
adsorbates. We find that neon sputtering introduces strong but dilute defects,
which can be modeled by a unitary impurity distribution, whereas adsorbates,
such as water vapor or carbon monoxide, are best described by Gaussian
disorder. Remarkably, these two disorder types have a dramatically different
effect on the surface states. Our soft x-ray ARPES measurements combined with
numerical simulations show that unitary surface disorder pushes the Dirac state
to inward quintuplet layers, burying it below an insulating surface layer. As a
consequence, the surface spectral function becomes weaker, but retains its
quasiparticle peak. This is in contrast to Gaussian disorder, which smears out
the quasiparticle peak completely. At the surface of Bi$_2$Se$_3$, the effects
of Gaussian disorder can be reduced by removing surface adsorbates using neon
sputtering, which, however, introduces unitary scatterers. Since unitary
disorder has a weaker effect than Gaussian disorder, the ARPES signal of the
Dirac surface state becomes sharper upon sputtering.
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Weyl semimetals are expected to open up new horizons in physics and materials
science because they provide the first realization of Weyl fermions and exhibit
protected Fermi arc surface states. However, they had been found to be
extremely rare in nature. Recently, a family of compounds, consisting of TaAs,
TaP, NbAs and NbP was predicted as Weyl semimetal candidates. Here, we
experimentally realize a Weyl semimetal state in TaP. Using photoemission
spectroscopy, we directly observe the Weyl fermion cones and nodes in the bulk
and the Fermi arcs on the surface. Moreover, we find that the surface states
show an unexpectedly rich structure, including both topological Fermi arcs and
several topologically-trivial closed contours in the vicinity of the Weyl
points, which provides a promising platform to study the interplay between
topological and trivial surface states on a Weyl semimetal's surface. We
directly demonstrate the bulk-boundary correspondence and hence establish the
topologically nontrivial nature of the Weyl semimetal state in TaP, by
resolving the net number of chiral edge modes on a closed path that encloses
the Weyl node. This also provides, for the first time, an experimentally
practical approach to demonstrating a bulk Weyl fermion from a surface state
dispersion measured in photoemission.
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Concept of a multichannel electron spin detector based on optical imaging
principles and Mott scattering (iMott) is presented. A multichannel electron
image produced by standard angle-resolving (photo) electron analyzer or
microscope is re-imaged by an electrostatic lens at an accelerating voltage of
40 keV onto the Au target. Quasi-elastic electrons bearing spin asymmetry of
the Mott scattering are imaged by magnetic lenses onto position-sensitive
electron CCDs whose differential signals yield the multichannel spin asymmetry
image. Fundamental advantages of this concept include acceptance of inherently
divergent electron sources from the electron analyzer or microscope focal plane
as well as small aberrations achieved by virtue of high accelerating voltages,
as demonstrated by extensive ray-tracing analysis. The efficiency gain compared
to the single-channel Mott detector can be a factor of more than 1e4 which
opens new prospects of spin-resolved spectroscopies in application not only to
standard bulk and surface systems (Rashba effect, topological insulators, etc.)
but also to buried heterostructures. The simultaneous spin detection and fast
CCD readout enable efficient use of the iMott detectors at X-ray FEL
facilities.
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Polarization-controlled synchrotron radiation was used to map the electronic
structure of buried conducting interfaces of LaAlO$_3$/SrTiO$_3$ in a resonant
angle-resolved photoemission experiment. A strong dependence on the light
polarization of the Fermi surface and band dispersions is demonstrated,
highlighting the distinct Ti 3d orbitals involved in 2D conduction. Samples
with different 2D doping levels were prepared and measured by photoemission,
revealing different band occupancies and Fermi surface shapes. A direct
comparison between the photoemission measurements and advanced first-principle
calculations carried out for different 3d-band fillings is presented in
conjunction with the 2D carrier concentration obtained from transport
measurements.
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(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows
ferromagnetism induced by doped hole carriers. With a few controversial models
emerged from numerous experimental and theoretical studies, the mechanism of
the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this
Letter, we use soft x-ray angle-resolved photoemission spectroscopy to
positively identify the ferromagnetic Mn 3d-derived impurity band in (Ga,Mn)As.
The band appears hybridized with the light-hole band of the host GaAs. These
findings conclude the picture of the valence band structure of (Ga,Mn)As
disputed for more than a decade. The non-dispersive character of the IB and its
location in vicinity of the valence-band maximum indicate that the Mn
3d-derived impurity band is formed as a split-off Mn-impurity state predicted
by the Anderson impurity model. Responsible for the ferromagnetism in (Ga,Mn)As
is the transport of hole carriers in the impurity band.
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Interplay of the angle dependent X-ray reflectivity and absorption with the
photoelectron attenuation length in the photoelectron emission process
determine the optimal X-ray incidence angle which maximizes the photoelectron
signal. Calculations in a wide VUV through hard-X-ray energy range show that
the optimal angle goes with energy progressively more grazing from a few tens
of degrees at 50 eV to about one degree at 3.5 keV accompanied by the intensity
gain increasing up to a few tens of times as long as the X-ray footprint on the
sample stays within the analyzer field of view. This trend is fairly material
independent. The obtained results bear immediate implications for design of the
(synchrotron based) photoelectron spectrometers.
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We report a high-resolution resonant inelastic soft x-ray scattering study of
the quantum magnetic spin-chain materials Li2CuO2 and CuGeO3. By tuning the
incoming photon energy to the oxygen K-edge, a strong excitation around 3.5 eV
energy loss is clearly resolved for both materials. Comparing the experimental
data to many-body calculations, we identify this excitation as a Zhang-Rice
singlet exciton on neighboring CuO4-plaquettes. We demonstrate that the strong
temperature dependence of the inelastic scattering related to this high-energy
exciton enables to probe short-range spin correlations on the 1 meV scale with
outstanding sensitivity.
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Atomically controlled crystal growth of thin films has established
foundations of nanotechnology aimed at the development of advanced functional
devices. Crystallization under non-equilibrium conditions allows engineering of
new materials with their atomically-flat interfaces in the heterostructures
exhibiting novel physical properties. From a fundamental point of view,
knowledge of the electronic structures of thin films and their interfaces is
indispensable to understand the origins of their functionality which further
evolves into realistic device application. In view of extreme surface
sensitivity of the conventional vacuum-ultraviolet (VUV) angle-resolved
photoemission spectroscopy (ARPES), with a probing depth of several angstroms,
experiments on thin films have to use sophisticated in-situ sample transfer
systems to avoid surface contamination. In this Letter, we put forward a method
to circumvent these difficulties using soft X-ray (SX) ARPES. A GaAs:Be thin
film in our samples was protected by an amorphous As layer with an thickness of
$\sim 1$ nm exceeding the probing depth of the VUV photoemission with photon
energy $h\nu$ around 100 eV. The increase of the probing depth with increasing
$h\nu$ towards the SX region has clearly exposed the bulk band dispersion
without any surface treatment. Any contributions from potential interface
states between the thin film and the amorphous capping layer has been below the
detection limit. Our results demonstrate that SX-ARPES enables the observation
of coherent three-dimensional band dispersion of buried heterostructure layers
through an amorphous capping layer, breaking through the necessity of surface
cleaning of thin film samples. Thereby, this opens new frontiers in diagnostics
of authentic momentum-resolved electronic structure of protected thin-film
heterostructures.
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Electronic structure of crystalline materials is their fundamental
characteristic which is the basis of almost all their physical and chemical
properties. Angle-resolved photoemission spectroscopy (ARPES) is the main
experimental tool to study all electronic structure aspects with resolution in
k-space. However, its application to three-dimensional (3D) materials suffers
from a fundamental problem of ill-defined surface-perpendicular wavevector kz.
Here, we achieve sharp definition of kz to enable precise navigation in 3D k
space by pushing ARPES into the soft-X-ray photon energy range. Essential to
break through the notorious problem of small photoexcitation cross-section was
an advanced photon flux performance of our instrumentation. We explore the
electronic structure of a transition metal dichalcogenide VSe2 which develops
charge density waves (CDWs) possessing exotic 3D character. We experimentally
identify nesting of its 3D Fermi surface (FS) as the precursor for these CDWs.
Our study demonstrates an immense potential of soft-X-ray ARPES (SX-ARPES) to
resolve various aspects of 3D electronic structure.
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BiTeI has a layered and non-centrosymmetric structure where strong spin-orbit
interaction leads to a giant spin splitting in the bulk bands. Here we present
high-resolution angle-resolved photoemission (ARPES) data in the UV and soft
x-ray regime that clearly disentangle the surface from the bulk electronic
structure. Spin-resolved UV-ARPES measurements on opposite, non-equivalent
surfaces show identical spin structures, thus clarifying the surface state
character. Soft x-ray ARPES data clearly reveal the spindle-torus shape of the
bulk Fermi surface, induced by the spin-orbit interaction.
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We combine high-resolution resonant inelastic x-ray scattering with cluster
calculations utilizing a recently derived effective magnetic scattering
operator to analyze the polarization, excitation energy, and momentum dependent
excitation spectrum of the low-dimensional quantum magnet TiOCl in the range
expected for orbital and magnetic excitations (0 - 2.5 eV). Ti 3d orbital
excitations yield complete information on the temperature-dependent
crystal-field splitting. In the spin-Peierls phase we observe a dispersive
two-spinon excitation and estimate the inter- and intra-dimer magnetic exchange
coupling from a comparison to cluster calculations.