
Directgap materials hold promises for excitonic insulator. In contrast to
indirectgap materials, here the difficulty to distinguish from a Peierls
charge density wave is circumvented. However, directgap materials still suffer
from the divergence of polarizability when the band gap approaches zero,
leading to diminishing exciton binding energy. We propose that one can decouple
the exciton binding energy from the band gap in materials where bandedge
states have the same parity. Firstprinciples calculations of twodimensional
GaAs and experimentally mechanically exfoliated singlelayer TiS 3 lend solid
supports to the new principle.

Thermal engineering of quantum devices has attracted much attention since the
discovery of quantized thermal conductance of phonons. Although easily
submerged in numerous excitations in macrosystems, quantum behaviors of
phonons manifest in nanoscale lowdimensional systems even at room temperature.
Especially in nano transport devices, phonons move quasiballistically when the
transport length is smaller than their bulk mean free paths. It has been shown
that phonon nonequilibrium Green's function method (NEGF) is effective for the
investigation of nanoscale quantum transport of phonons. In this tutorial
review two aspects of thermal engineering of quantum devices are discussed
using NEGF methods. One covers transport properties of pure phonons; the other
concerns the caloritronic effects, which manipulate other degrees of freedom,
such as charge, spin, and valley, via the temperature gradient. For each part,
we outline basic theoretical formalisms first, then provide a survey on related
investigations on models or realistic materials. Particular attention is given
to phonon topologies and a generalized phonon NEGF method. Finally, we conclude
our review and summarize with an outlook.

Topological semimetals (TSMs) in which conduction and valence bands cross at
zerodimensional (0D) Dirac nodal points (DNPs) or 1D Dirac nodal lines (DNLs),
in 3D momentum space, have recently drawn much attention due to their exotic
electronic properties. Here we generalize the TSM state further to a
highersymmetry and higherdimensional Dirac nodal sphere (DNS), with the band
crossing points forming a 2D closed sphere around the Fermi level. Based on the
k*p model, we demonstrate two possible types of such novel DNS fermionic states
underlied by different crystalline symmetries, whose topologies are well
defined by two different topological invariants. We identify all the possible
band crossings with pairs of 1D irreducible representations to form the DNS
states in 32 point groups. Importantly, we discover that metal hydrides MH3 (M=
Y, Ho, Tb, Nd) and Si3N2 are ideal candidates to realize these two types of DNS
states under certain strains. Furthermore, we show that the DNS semimetal is
characterized by drumhead surface states independent of surface orientations,
which are distinctly different from the DNP or DNL semimetals. As a
highsymmetryrequired state, the DNS semimetal can be regarded as the "parent
phase" for other topological gapped and gapless states.

Density functional theory (DFT) can run into serious difficulties with
localized states in elements such as transition metals with occupiedd states
and oxygen. In contrast, HartreeFock (HF) method can be a better approach for
such localized states. Here, we develop HF pseudopotentials to be used
alongside with DFT for solids. The computation cost is on par with standard
DFT. Calculations for a range of IIVI, IIIV and groupIV semiconductors with
diverse physical properties show observably improved band gap for systems
containing delectrons, whereby pointing to a new direction in electronic
theory.

The modern semiclassical theory of a Bloch electron in a magnetic field now
encompasses the orbital magnetic moment and the geometric phase. These two
notions are encoded in the BohrSommerfeld quantization condition as a phase
($\lambda$) that is subleading in powers of the field; $\lambda$ is measurable
in the phase offset of the de Haasvan Alphen oscillation, as well as of
fixedbias oscillations of the differential conductance in tunneling
spectroscopy. In some solids and for certain field orientations, $\lambda/\pi$
are robustly integervalued owing to the symmetry of the extremal orbit, i.e.,
they are the topological invariants of magnetotransport. Our comprehensive
symmetry analysis identifies solids in any (magnetic) space group for which
$\lambda$ is a topological invariant, as well as identifies the
symmetryenforced degeneracy of Landau levels. The analysis is simplified by
our formulation of ten (and only ten) symmetry classes for closed,
Fermisurface orbits. Case studies are discussed for graphene, transition metal
dichalchogenides, 3D Weyl and Dirac metals, and crystalline and $\mathbb{Z}_2$
topological insulators. In particular, we point out that a $\pi$ phase offset
in the fundamental oscillation should \emph{not} be viewed as a smoking gun for
a 3D Dirac metal.

A key challenge in manipulating the magnetization in
heavymetal/ferromagnetic bilayers via the spinorbit torque is to identify
materials that exhibit an efficient chargetospin current conversion. Ab
initio electronic structure calculations reveal that the intrinsic spin Hall
conductivity (SHC) for pristine $\beta$W is about sixty percent larger than
that of $\alpha$W. More importantly, we demonstrate that the SHC of $\beta$W
can be enhanced via Ta alloying. This is corroborated by spin Berry curvature
calculations of W$_{1x}$Ta$_x$ ($x$ $\sim$ 12.5%) alloys which show a giant
enhancement of spin Hall angle of up to $\approx$ $0.5$. The underlying
mechanism is the synergistic behavior of the SHC and longitudinal conductivity
with Fermi level position. These findings, not only pave the way for enhancing
the intrinsic spin Hall effect in $\beta$W, but also provide new guidelines to
exploit substitutional alloying to tailor the spin Hall effect in various
materials.

The search for exotic topological effects of phonons has attracted enormous
interest for both fundamental science and practical applications. By studying
phonons in a Kekul\'e lattice, we find a new type of pseudospins characterized
by quantized Berry phases and pseudoangular momenta, which introduces various
novel topological effects, including topologically protected
pseudospinpolarized interface states and a phonon pseudospin Hall effect. We
further demonstrate a pseudospincontrasting optical selection rule and a
pseudospin Zeeman effect, giving a complete generationmanipulationdetection
paradigm of the phonon pseudospin. The pseudospin and topologyrelated physics
revealed for phonons is general and applicable for electrons, photons and other
particles.

We have investigated the effect of transition metal dopants on the local
structure of the prototypical 0.75 Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$0.25 PbTiO$_3$
relaxor ferroelectric. We find that these dopants give rise to very different
local structure and other physical properties. For example, when Mg is
partially substituted by Cu or Zn, the displacement of Cu or Zn is much larger
than that of Mg, and is even comparable to that of Nb. The polarization of
these systems is also increased, especially for the Cudoped solution, due to
the large polarizability of Cu and Zn. As a result, the predicted maximum
dielectric constant temperatures ($T_m$) are increased. On the other hand, the
replacement of a Ti atom with a Mo or Tc dramatically decreases the
displacements of the cations and the polarization, and thus, the $T_m$ values
are also substantially decreased. The higher $T_m$ cannot be explained by the
conventional argument based on the ionic radii of the cations. Furthermore, we
find that Cu, Mo, or Tc doping increase the cations displacement disorder. The
effect of the dopants on the temperature dispersion ${\Delta}T_m$, which is the
change of $T_m$ for different frequencies, is also discussed. Our findings lay
the foundation for further investigations of unexplored dopants.

The quantum anomalous Hall effect, an exotic topological state first
theoretically predicted by Haldane and recently experimentally observed, has
attracted enormous interest for lowpowerconsumption electronics. In this
work, we derived a Schr{\"o}dingerlike equation of phonons, where
topologyrelated quantities, time reversal symmetry and its breaking can be
naturally introduced similar as for electrons. Furthermore, we proposed a
phononic analog of the Haldane model, which gives the novel quantum (anomalous)
Halllike phonon states characterized by oneway gapless edge modes immune to
scattering. The topologically nontrivial phonon states are useful not only for
conducting phonons without dissipation but also for designing highly efficient
phononic devices, like an ideal phonon diode, which could find important
applications in future phononics.

Phonons as collective excitations of lattice vibrations are the main heat
carriers in solids. Tremendous effort has been devoted to investigate phonons
and related properties, giving rise to an intriguing field of phononics, which
is of great importance to many practical applications, including heat
dissipation, thermal barrier coating, thermoelectrics and thermal control
devices. Meanwhile, the research of topologyrelated physics, awarded the 2016
Nobel Prize in Physics, has led to discoveries of various exotic quantum states
of matter, including the quantum (anomalous/spin) Hall [Q(A/S)H] effects,
topological insulators/semimetals and topological superconductors. An emerging
research field is to bring topological concepts for a new paradigm
phononics"topological phononics". In this Perspective, we will briefly
introduce this emerging field and discuss the use of novel quantum degrees of
freedom like the Berry phase and topology for manipulating phonons in
unprecedentedly new ways.

Materials with large magnetocrystalline anisotropy and strong electric field
effects are highly needed to develop new types of memory devices based on
electric field control of spin orientations. Instead of using modified
transition metal films, we propose that certain monolayer transition metal
dichalcogenides are the ideal candidate materials for this purpose. Using
density functional calculations, we show that they exhibit not only a large
magnetocrystalline anisotropy (MCA), but also colossal voltage modulation under
external field. Notably, in some materials like CrSe_2 and FeSe_2, where spins
show a strong preference for inplane orientation, they can be switched to
outofplane direction. This effect is attributed to the large band character
alteration that the transition metal dstates undergo around the Fermi energy
due to the electric field. We further demonstrate that strain can also greatly
change MCA, and can help to improve the modulation efficiency while combined
with an electric field.

Atomically thin PtSe2 films have attracted extensive research interests for
potential applications in highspeed electronics, spintronics and
photodetectors. Obtaining high quality, single crystalline thin films with
large size is critical. Here we report the first successful layerbylayer
growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin
films from 1 ML to 22 ML have been grown and characterized by lowenergy
electron diffraction, Raman spectroscopy and Xray photoemission spectroscopy.
Moreover, a systematic thickness dependent study of the electronic structure is
revealed by angleresolved photoemission spectroscopy (ARPES), and helical spin
texture is revealed by spinARPES. Our work provides new opportunities for
growing large size single crystalline films for investigating the physical
properties and potential applications of PtSe2.

Topological semimetals have attracted extensive research interests for
realizing condensed matter physics counterparts of threedimensional Dirac and
Weyl fermions, which were originally introduced in high energy physics.
Recently it has been proposed that typeII Dirac semimetal can host a new type
of Dirac fermions which break Lorentz invariance and therefore does not have
counterpart in high energy physics. Here we report the electronic structure of
high quality PtSe$_2$ crystals to provide direct evidence for the existence of
threedimensional typeII Dirac fermions. A comparison of the crystal,
vibrational and electronic structure to a sister compound PtTe$_2$ is also
discussed. Our work provides an important platform for exploring the novel
quantum phenomena in the PtSe$_2$ class of typeII Dirac semimetals.

Migration of oxygen vacancies has been proposed to play an important role in
the bipolar memristive behaviors since oxygen vacancies can directly determine
the local conductivity in many systems. However, a recent theoretical work
demonstrated that both migration of oxygen vacancies and coexistence of cation
and anion vacancies are crucial to the occurrence of bipolar memristive
switching, normally observed in the smallsized NiO. So far, experimental work
addressing this issue is still lacking. In this work, with conductive atomic
force microscope and combined scanning transmission electron microscopy &
electron energy loss spectroscopy, we reveal that concentration surplus of Ni
vacancy over O vacancy determines the bipolar memristive switching of NiO
films. Our work supports the dualdefectsbased model, which is of fundamental
importance for understanding the memristor mechanisms beyond the
wellestablished oxygenvacancybased model. Moreover, this work provides a
methodology to investigate the effect of dual defects on memristive behaviors.

Recently, a new "typeII" Weyl fermion, which exhibits exotic phenomena such
as angledependent chiral anomaly, was discovered in a new phase of matter
where electron and hole pockets contact at isolated Weyl points. [Nature
\textbf{527}, 495 (2015)] This raises an interesting question whether its
counterpart, i.e., typeII \textit{Dirac} fermion, exists in real materials.
Here, we predict the existence of symmetryprotected typeII Dirac fermions in
a class of transition metal dichalcogenide materials. Our firstprinciples
calculations on PtSe$_2$ reveal its bulk typeII Dirac fermions which are
characterized by strongly tilted Dirac cones, novel surface states, and exotic
dopingdriven Lifshitz transition. Our results show that the existence of
typeII Dirac fermions in PtSe$_2$type materials is closely related to its
structural $P\bar{3}m1$ symmetry, which provides useful guidance for the
experimental realization of typeII Dirac fermions and intriguing physical
properties distinct from those of the standard Dirac fermions known before.

Weyl semimetal is a new quantum state of matter [112] hosting the condensed
matter physics counterpart of relativisticWeyl fermion [13] originally
introduced in high energy physics. The Weyl semimetal realized in the TaAs
class features multiple Fermi arcs arising from topological surface states [10,
11, 1416] and exhibits novel quantum phenomena, e.g., chiral anomaly induced
negative magnetoresistance [1719] and possibly emergent supersymmetry [20].
Recently it was proposed theoretically that a new type (typeII) of Weyl
fermion [21], which does not have counterpart in high energy physics due to the
breaking of Lorentz invariance, can emerge as topologicallyprotected touching
between electron and hole pockets. Here, we report direct spectroscopic
evidence of topological Fermi arcs in the predicted typeII Weyl semimetal
MoTe2 [2224]. The topological surface states are confirmed by directly
observing the surface states using bulkand surfacesensitive angleresolved
photoemission spectroscopy (ARPES), and the quasiparticle interference (QPI)
pattern between the two putative Fermi arcs in scanning tunneling microscopy
(STM). Our work establishes MoTe2 as the first experimental realization of
typeII Weyl semimetal, and opens up new opportunities for probing novel
phenomena such as exotic magnetotransport [21] in typeII Weyl semimetals.

The rise of topological insulators in recent years has broken new ground both
in the conceptual cognition of condensed matter physics and the promising
revolution of the electronic devices. It also stimulates the explorations of
more topological states of matter. Topological crystalline insulator is a new
topological phase, which combines the electronic topology and crystal symmetry
together. In this article, we review the recent progress in the studies of
SnTeclass topological crystalline insulator materials. Starting from the
topological identifications in the aspects of the bulk topology, surface states
calculations and experimental observations, we present the electronic
properties of topological crystalline insulators under various perturbations,
including native defect, chemical doping, strain, and thicknessdependent
confinement effects, and then discuss their unique quantum transport
properties, such as valleyselective filtering and helicityresolved
functionalities for Dirac fermions. The rich properties and high tunability
make SnTeclass materials promising candidates for novel quantum devices.

Topological semimetals have recently attracted extensive research interests
as host materials to condensed matter physics counterparts of Dirac and Weyl
fermions originally proposed in high energy physics. These fermions with linear
dispersions near the Dirac or Weyl points obey Lorentz invariance, and the
chiral anomaly leads to novel quantum phenomena such as negative
magnetoresistance. The Lorentz invariance is, however, not necessarily
respected in condensed matter physics, and thus Lorentzviolating typeII Dirac
fermions with strongly tilted cones can be realized in topological semimetals.
Here, we report the first experimental evidence of typeII Dirac fermions in
bulk stoichiometric PtTe$_2$ single crystal. Angleresolved photoemission
spectroscopy (ARPES) measurements and firstprinciples calculations reveal a
pair of strongly tilted Dirac cones along the $\Gamma$A direction under the
symmetry protection, confirming PtTe$_2$ as a typeII Dirac semimetal. The
realization of typeII Dirac fermions opens a new door for exotic physical
properties distinguished from typeI Dirac fermions in condensed matter
materials.

Based on firstprinciples calculations and an effective Hamiltonian analysis,
we systematically investigate the electronic and topological properties of
alkalineearth compounds $AX_2$ ($A$=Ca, Sr, Ba; $X$=Si, Ge, Sn). Taking
BaSn$_2$ as an example, we find that when spinorbit coupling is ignored, these
materials are threedimensional topological nodalline semimetals characterized
by a snakelike nodal loop in threedimensional momentum space. Drumheadlike
surface states emerge either inside or outside the loop circle on the (001)
surface depending on surface termination, while complicated
doubledrumheadlike surface states appear on the (010) surface. When
spinorbit coupling is included, the nodal line is gapped and the system
becomes a topological insulator with Z$_2$ topological invariants (1;001).
Since spinorbit coupling effects are weak in light elements, the nodalline
semimetal phase is expected to be achievable in some alkalineearth germanides
and silicides.

Based on firstprinciples calculations, we find that LiZnBi, a metallic
hexagonal $ABC$ compound, can be driven into a Dirac semimetal with a pair of
Dirac points by strain. The nontrivial topological nature of the strained
LiZnBi is directly demonstrated by calculating its $\mathbb{Z}_2$ index and the
surface states, where the Fermi arcs are clearly observed. The lowenergy
states as well as topological properties are shown to be sensitive to the
strain configurations. The finding of Dirac semimetal phase in LiZnBi may
intrigue further researches on the topological properties of hexagonal $ABC$
materials and promote new practical applications.

The generally accepted view that spin polarization is induced by the
asymmetry of the global crystal space group has limited the search for
spintronics [1] materials to noncentrosymmetric materials. Recently it has
been suggested that spin polarization originates fundamentally from local
atomic site asymmetries [2], and therefore centrosymmetric materials may
exhibit previously overlooked spin polarizations. Here by using spin and
angleresolved photoemission spectroscopy (spinARPES), we report helical spin
texture induced by local Rashba effect (R2) in centrosymmetric monolayer
PtSe$_2$ film. Firstprinciples calculations and effective analytical model
support the spinlayer locking picture: in contrast to the spin splitting in
conventional Rashba effect (R1), the opposite spin polarizations induced by
R2 are degenerate in energy while spatially separated in the top and bottom Se
layers. These results not only enrich our understanding of spin polarization
physics, but also may find applications in electrically tunable spintronics.

The low energy physics of both graphene and surface states of
threedimensional topological insulators is described by gapless Dirac fermions
with linear dispersion. In this work, we predict the emergence of a "heavy"
Dirac fermion in a graphene/topological insulator heterojunction, where the
linear term almost vanishes and the corresponding energy dispersion becomes
highly nonlinear. By combining {\it ab initio} calculations and an effective
lowenergy model, we show explicitly how strong hybridization between Dirac
fermions in graphene and the surface states of topological insulators can
reduce the Fermi velocity of Dirac fermions. Due to the negligible linear term,
interaction effects will be greatly enhanced and can drive "heavy" Dirac
fermion states into the half quantum Hall state with nonzero Hall conductance.

Three dimensional topological Dirac semimetals represent a novel state of
quantum matter with exotic electronic properties, in which a pair of Dirac
points with the linear dispersion along all momentum directions exist in the
bulk. Herein, by using the first principles calculations, we discover a new
metastable allotrope of Ge and Sn in the staggered layered dumbbell structure,
named as germancite and stancite, to be Dirac semimetals with a pair of Dirac
points on its rotation axis. On the surface parallel to the rotation axis, a
pair of topologically nontrivial Fermi arcs are observed and a Lifshitz
transition is found by tuning the Fermi level. Furthermore, the quantum thin
film of germancite is found to be an intrinsic quantum spin Hall insulator.
These discoveries suggest novel physical properties and future applications of
the new metastable allotrope of Ge and Sn.

Graphene nanoribbons (GNRs) are onedimensional (1D) structures that exhibit
a rich variety of electronic properties117. Therefore, they are predicted to
be the building blocks in nextgeneration nanoelectronic devices.
Theoretically, it has been demonstrated that armchair GNRs can be divided into
three families, i.e., Na = 3p, Na = 3p + 1, and Na = 3p + 2 (here Na is the
number of dimer lines across the ribbon width and p is an integer), according
to their electronic structures, and the energy gaps for the three families are
quite different even with the same p1,36. However, a systematic experimental
verification of this fundamental prediction is still lacking, owing to very
limited atomiclevel control of the width of the armchair GNRs
investigated7,9,10,13,17. Here, we studied electronic structures of the
armchair GNRs with atomically welldefined widths ranging from Na = 6 to Na =
26 by using scanning tunnelling microscope (STM). Our result demonstrated
explicitly that all the studied armchair GNRs exhibit semiconducting gaps due
to quantum confinement and, more importantly, the observed gaps as a function
of Na are well grouped into the three categories, as predicted by
densityfunctional theory calculations3. Such a result indicated that we can
tune the electronic properties of the armchair GNRs dramatically by simply
adding or cutting one carbon dimer line along the ribbon width.

The lightlike dispersion of graphene monolayer results in many novel
electronic properties in it1, however, this gapless feature also limits the
applications of graphene monolayer in digital electronics2. A rare working
solution to generate a moderate bandgap in graphene monolayer is to cut it into
onedimensional (1D) nanometrewide ribbons313. Here we show that a wide
bandgap can be created in a unique 1D strained structure, i.e.,
graphenenanoribbonlike (GNRlike) structure, of a continuous graphene sheet
via strong interaction between graphene and the metal substrate, instead of
cutting graphene monolayer. The GNRlike structures with width of only a few
nanometers are observed in a continuous graphene sheet grown on Rh foil by
using thermal strain engineering. Spatiallyresolved scanning tunnelling
spectroscopy revealed bandgap opening of a few hundreds meV in the GNRlike
structure in an otherwise continuous metallic graphene sheet, directly
demonstrating the realization of a metallicsemiconductingmetallic junction
entirely in a graphene monolayer. We also show that it is possible to tailor
the structure and electronic properties of the GNRlike structure by using
scanning tunnelling microscope.