• ### Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$(1312.7015)

Oct. 3, 2015 cond-mat.str-el
Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr$_{2}$IrO$_{4}$ (SIO) were investigated under the action of ionic liquid gating. Despite large carrier density modulation, the temperature dependent resistance measurements exhibit insulating behavior in chemically and EFE doped samples with the band filling up to 10\%. The ambipolar transport across the Mott gap is demonstrated by EFE tuning of the activation energy. Further, we observe a crossover from a negative magnetoresistance (MR) at high temperatures to positive MR at low temperatures. The crossover temperature was around $\sim$80-90 K, irrespective of the filling. This temperature and magnetic field dependent crossover is qualitatively associated with a change in the conduction mechanism from Mott to Coulomb gap mediated variable range hopping (VRH). This explains the origin of robust insulating ground state of SIO in electrical transport studies and highlights the importance of disorder and Coulombic interaction on electrical properties of SIO.
• ### Successive magnetic field-induced transitions and colossal magnetoelectric effect in Ni$_{3}$TeO$_{6}$(1509.04715)

We report the discovery of a metamagnetic phase transition in a polar antiferromagnet Ni$_3$TeO$_6$ that occurs at 52 T. The new phase transition accompanies a colossal magnetoelectric effect, with a magnetic-field-induced polarization change of 0.3 $\mu$C/cm$^2$, a value that is 4 times larger than for the spin-flop transition at 9 T in the same material, and also comparable to the largest magnetically-induced polarization changes observed to date. Via density-functional calculations we construct a full microscopic model that describes the data. We model the spin structures in all fields and clarify the physics behind the 52 T transition. The high-field transition involves a competition between multiple different exchange interactions which drives the polarization change through the exchange-striction mechanism. The resultant spin structure is rather counter-intuitive and complex, thus providing new insights on design principles for materials with strong magnetoelectric coupling.

• ### Interplay between Fermi surface topology and ordering in URu$_{2}$Si$_2$ revealed through abrupt Hall coefficient changes in strong magnetic fields(cond-mat/0609501)

Nov. 30, 2006 cond-mat.str-el
Temperature- and field-dependent measurements of the Hall effect of pure and 4 % Rh-doped URu$_{2}$Si$_{2}$ reveal low density (0.03 hole/U) high mobility carriers to be unique to the hidden order' phase and consistent with an itinerant density-wave order parameter. The Fermi surface undergoes a series of abrupt changes as the magnetic field is increased. When combined with existing de Haas-van Alphen data, the Hall data expose a strong interplay between the stability of the hidden order,' the degree of polarization of the Fermi liquid and the Fermi surface topology.
• ### Phonon Thermal Transport of URu2Si2: Broken Translational Symmetry and Strong-Coupling of the Hidden Order to the Lattice(cond-mat/0507545)

Aug. 3, 2005 cond-mat.str-el
A dramatic increase in the total thermal conductivity (k) is observed in the Hidden Order (HO) state of single crystal URu2Si2. Through measurements of the thermal Hall conductivity, we explicitly show that the electronic contribution to k is extremely small, so that this large increase in k is dominated by phonon conduction. An itinerant BCS/mean-field model describes this behavior well: the increase in kappa is associated with the opening of a large energy gap at the Fermi Surface, thereby decreasing electron-phonon scattering. Our analysis implies that the Hidden Order parameter is strongly coupled to the lattice, suggestive of a broken symmetry involving charge degrees of freedom.