
We report simultaneous transport and scanning microwave impedance microscopy
to examine the correlation between transport quantization and filling of the
bulk Landau levels in the quantum Hall regime in gated graphene devices.
Surprisingly, a comparison of these measurements reveals that quantized
transport typically occurs below the complete filling of bulk Landau levels,
when the bulk is still conductive. This result points to a revised
understanding of transport quantization when carriers are accumulated by
gating. We discuss the implications on transport study of the quantum Hall
effect in graphene and related topological states in other twodimensional
electron systems.

The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs)
is considered a milestone in the discovery of topological insulators. The QSH
edge states are predicted to allow current to flow at the edges of an
insulating bulk, as demonstrated in various experiments. A key prediction of
QSH theory that remains to be experimentally verified is the breakdown of the
edge conduction under broken time reversal symmetry (TRS). Here we first
establish a rigorous framework for understanding the magnetic field dependence
of electrostatically gated QSH devices. We then report unexpected edge
conduction under broken TRS, using a unique cryogenic microwave impedance
microscopy (MIM), on a 7.5 nm HgTe QW device with an inverted band structure.
At zero magnetic field and low carrier densities, clear edge conduction is
observed in the local conductivity profile of this device but not in the 5.5 nm
control device whose band structure is trivial. Surprisingly, the edge
conduction in the 7.5 nm device persists up to 9 T with little effect from the
magnetic field. This indicates physics beyond simple QSH models, possibly
associated with material specific properties, other symmetry protection and/or
electronelectron interactions.

Quantum systems in confined geometries are host to novel physical phenomena.
Examples include quantum Hall systems in semiconductors and Dirac electrons in
graphene. Interest in such systems has also been intensified by the recent
discovery of a large enhancement in photoluminescence quantum efficiency and a
potential route to valleytronics in atomically thin layers of transition metal
dichalcogenides, MX2 (M = Mo, W; X = S, Se, Te), which are closely related to
the indirect to direct bandgap transition in monolayers. Here, we report the
first direct observation of the transition from indirect to direct bandgap in
monolayer samples by using angle resolved photoemission spectroscopy on
highquality thin films of MoSe2 with variable thickness, grown by molecular
beam epitaxy. The band structure measured experimentally indicates a stronger
tendency of monolayer MoSe2 towards a direct bandgap, as well as a larger gap
size, than theoretically predicted. Moreover, our finding of a significant
spinsplitting of 180 meV at the valence band maximum of a monolayer MoSe2 film
could expand its possible application to spintronic devices.

We demonstrate a simple networkanalyzer technique to make quantitative
measurements of the bias dependence of spin torque in a magnetic tunnel
junction. We apply a microwave current to exert an oscillating spin torque near
the ferromagnetic resonance frequency of the tunnel junction's free layer. This
produces an oscillating resistance that, together with an applied direct
current, generates a microwave signal that we measure with the network
analyzer. An analysis of the resonant response yields the strength and
direction of the spin torque at nonzero bias. We compare to measurements of
the spin torque vector by timedomain spintorque ferromagnetic resonance.

A pure spin current generated within a nonlocal spin valve can exert a spin
transfer torque on a nanomagnet. This nonlocal torque enables new design
schemes for magnetic memory devices that do not require the application of
large voltages across tunnel barriers that can suffer electrical breakdown.
Here we report a quantitative measurement of this nonlocal spin torque using
spintorquedriven ferromagnetic resonance. Our measurement agrees well with
the prediction of an effective circuit model for spin transport. Based on this
model, we suggest strategies for optimizing the strength of nonlocal torque.

Several experimental techniques have been introduced in recent years in
attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs).
The dependence of spin torque on bias is important for understanding
fundamental spin physics in magnetic devices and for applications. However,
previous techniques have provided only indirect measures of the torque and
their results to date for the bias dependence are qualitatively and
quantitatively inconsistent. Here we demonstrate that spin torque in MTJs can
be measured directly by using timedomain techniques to detect resonant
magnetic precession in response to an oscillating spin torque. The technique is
accurate in the highbias regime relevant for applications, and because it
detects directly smallangle linearresponse magnetic dynamics caused by spin
torque it is relatively immune to artifacts affecting competing techniques. At
high bias we find that the spin torque vector differs markedly from the simple
lowestorder Taylor series approximations commonly assumed.