
Fast and efficient identify a large number of RFID tags in the region of
interest is a critical issue in various RFID applications. In this paper, a
novel subframebased algorithm with a timeefficient frame size adjustment
strategy to reduce the time complexity for EPCglobal C1 Gen2 UHF RFID standard
is proposed. By observing the slot statistics in a subframe, the tag quantity
is estimated by the reader, which afterwards efficiently calculates an optimal
frame size to fit the unread tags. Only when the expected time efficiency in
the oncoming frame is higher than that in the previous frame, the reader starts
the new identification round with the updated frame. Moreover, the estimation
of the proposed algorithm is implemented by the lookup tables, which allows
dramatically reduction in the computational complexity. Simulation results show
noticeable throughput, time efficiency, and identification speed improvements
of the proposed solution over the existing approaches.

This paper considers the discrete Fourier transform (DFT) based hybrid
beamforming multiuser system and studies the use of analog beam selection
schemes. We first analyze the uplink ergodic achievable rates of the
zeroforcing (ZF) receiver and the maximumratio combining (MRC) receiver under
Ricean fading conditions. We then examine the downlink ergodic achievable rates
for the ZF and maximumratio transmitting (MRT) precoders. The longterm and
shortterm normalization methods are introduced, which utilize longterm and
instantaneous channel state information (CSI) to implement the downlink power
normalization, respectively. Also, approximations and asymptotic expressions of
both the uplink and downlink rates are obtained, which facilitate the analog
beam selection solutions to maximize the achievable rates. An exhaustive search
provides the optimal results but to reduce the timeconsumption, we resort to
the derived rate limits and propose the second selection scheme based on the
projected power of the lineofsight (LoS) paths. We then combine the
advantages of the two schemes and propose a twostep scheme that achieves near
optimal performances with much less timeconsumption than exhaustive search.
Numerical results confirm the analytical results of the ergodic achievable rate
and reveal the effectiveness of the proposed twostep method.

In the spatially flat case of loop quantum cosmology, the connection
$\bar{k}$ is usually replaced by the holonomy
$\frac{\sin(\bar{\mu}k)}{\bar{\mu}}$ in the effective theory. In this paper,
instead of the $\bar{\mu}$ scheme, we use a generalised, undertermined function
$g(\bar{k},\bar{p})$ to represent the holonomy and by using the approach of
anomaly free constraint algebra we fix all the counter terms in the constraints
and find the restriction on the form of $g(\bar{k},\bar{p})$, then we derive
the gauge invariant equations of motion of the scalar, tensor and vector
perturbations and study the inflationary power spectra with generalised
holonomy correction.

Secure key rate of decoystate quantum key distribution protocols has been
improved with biased basis choice, however, the security standards and
parameters of current protocols are different. As a result, we cannot give an
accurate key rate comparison between different kinds of protocols. Taking the
schemes based on different formula of secure key rate as examples, we give a
fair comparison between typical protocols under universal composable security
standard. Through analyzing the relationship of security parameters in
postprocessing stage and final secure key, we achieve the unified
quantification between protocols based on GottesmanLoLutkenhausPreskill
formula and the ones under universal composable security. Based on the above
research, the impact of different sending length and secure parameters on
secure key rate is investigated, meanwhile, we give the dependent relationship
between secure key rate and sending length under different secure parameters.
Besides, we analyze the importance and conditions of fair comparison. For the
first time we give a fair comparison between the protocols based on GLLP
formula and smooth entropy, and taking Raymond protocol and Toshiba protocol as
examples, we analyze the way for improving secure key rate in the light
intensity choice and the single bit error rate estimation method.

Cellfree massive multipleinput multipleoutput (MIMO), with a large number
of distributed access points (APs) that jointly serve the user equipments
(UEs), is a promising network architecture for future wireless communications.
To reduce the cost and power consumption of such systems, it is important to
utilize lowquality transceiver hardware at the APs. However, the impact of
hardware impairments on cellfree massive MIMO has thus far not been studied.
In this paper, we take a first look at this important topic by utilizing
wellestablished models of hardware distortion and deriving new closedform
expressions for the spectral and energy efficiency. These expressions provide
important insights into the practical impact of hardware impairments and also
how to efficiently deploy cellfree systems. Furthermore, a novel
hardwarequality scaling law is presented. It proves that the impact of
hardware impairments at the APs vanish as the number of APs grows. Numerical
results validate that cellfree massive MIMO systems are inherently resilient
to hardware impairments.

Piezoelectric and ferroelectric properties in the two dimensional (2D) limit
are highly desired for nanoelectronic, electromechanical, and optoelectronic
applications. Here we report the first experimental evidence of outofplane
piezoelectricity and ferroelectricity in van der Waals layered
${\alpha}$In2Se3 nanoflakes. The noncentrosymmetric R3m symmetry of the
${\alpha}$In2Se3 samples is confirmed by scanning transmission electron
microscopy, secondharmonic generation, and Raman spectroscopy measurements.
Domains with opposite polarizations are visualized by piezoresponse force
microscopy. Singlepoint poling experiments suggest that the polarization is
potentially switchable for ${\alpha}$In2Se3 nanoflakes with thicknesses down
to ~ 10 nm. The piezotronic effect is demonstrated in twoterminal devices,
where the Schottky barrier can be modulated by the straininduced
piezopotential. Our work on polar ${\alpha}$In2Se3, one of the model 2D
piezoelectrics and ferroelectrics with simple crystal structures, shows its
great potential in electronic and photonic applications.

In this paper, we establish the lower semicontinuity of the solution mapping
and of the approximate solution mapping for parametric fixed point problems
under some suitable conditions. As applications, the lower semicontinuity
result applies to the parametric vector quasiequilibrium problem, and allows
to prove the existence of solutions for generalized Stackelberg games.

In 5D relativity, the usual 4D cosmological constant is determined by the
extra dimension. If the extra dimension is spacelike, one can get a positive
cosmological constant $\Lambda$ and a 4D de Sitter (dS) space. In this paper we
present that, if the extra dimension is timelike oppositely, the negative
$\Lambda$ will be emerged and the induced 4D space will be an asymptotic
Antide Sitter (AdS). Under the minimum assumption, we solve the KaluzaKlein
equation $R_{AB} = 0$ in a canonical system and obtain the AdS solution in a
general case. The result shows that an AdS space is induced naturally from a
KaluzaKlein manifold on a hypersurface (brane). The Lagrangian of test
particle indicates the equation of motion can be geodesics if the 4D metric is
independent of extra dimension. The causality is well respected because it is
appropriately defined by a null higher dimensional interval. In this 5D
relativity, the holographic principle can be used safely because the brane is
asymptotic Euclidean AdS in the bulk. We also explore some possible holographic
duality implications about the field/operator correspondence and the twopoints
correlation functions.

Nanoporous graphitic carbon membranes with defined chemical composition and
pore architecture are novel nanomaterials that are actively pursued. Compared
to easytomake porous carbon powders that dominate the porous carbon research
and applications in energy generation/conversion and environmental remediation,
porous carbon membranes are synthetically more challenging though rather
appealing from an application perspective due to their structural integrity,
interconnectivity and purity. Here we report a simple bottomup approach to
fabricate largesize, freestanding, porous carbon membranes that feature an
unusual singlecrystallike graphitic order and hierarchical pore architecture
plus favorable nitrogen doping. When loaded with cobalt nanoparticles, such
carbon membranes serve as highperformance carbonbased nonnoble metal
electrocatalyst for overall water splitting.

Low carrier mobility and high electrical contact resistance are two major
obstacles prohibiting explorations of quantum transport in TMDCs. Here, we
demonstrate an effective method to establish lowtemperature Ohmic contacts in
boron nitride encapsulated TMDC devices based on selective etching and
conventional electronbeam evaporation of metal electrodes. This method works
for most extensively studied TMDCs in recent years, including MoS2, MoSe2,
WSe2, WS2, and 2HMoTe2. Low electrical contact resistance is achieved at 2 K.
All of the fewlayer TMDC devices studied show excellent performance with
remarkably improved fieldeffect mobilities ranging from 2300 cm2/V s to 16000
cm2/V s, as verified by the high carrier mobilities extracted from Hall effect
measurements. Moreover, both highmobility ntype and ptype TMDC channels can
be realized by simply using appropriate contact metals. Prominent Shubnikovde
Haas oscillations have been observed and investigated in these highquality
TMDC devices.

Atomically thin black phosphorus (BP) is a promising twodimensional material
for fabricating electronic and optoelectronic nanodevices with high mobility
and tunable bandgap structures. However, the chargecarrier mobility in
fewlayer phosphorene (monolayer BP) is mainly limited by the presence of
impurity and disorders. In this study, we demonstrate that vertical BP
heterostructure devices offer great advantages in probing the electron states
of monolayer and fewlayer phosphorene at temperatures down to 2 K through
capacitance spectroscopy. Electronic states in the conduction and valence bands
of phosphorene are accessible over a wide range of temperature and frequency.
Exponential band tails have been determined to be related to disorders. Unusual
phenomena such as the large temperaturedependence of the electron state
population in fewlayer phosphorene have been observed and systematically
studied. By combining the firstprinciples calculation, we identified that the
thermal excitation of charge trap states and oxidationinduced defect states
were the main reasons for this large temperature dependence of the electron
state population and degradation of the onoff ratio in phosphorene
fieldeffect transistors.

The dielectric constant or relative permittivity of a dielectric material,
which describes how the net electric field in the medium is reduced with
respect to the external field, is a parameter of critical importance for
charging and screening in electronic devices. Such a fundamental material
property is intimately related to not only the polarizability of individual
atoms, but also the specific atomic arrangement in the crystal lattice. In this
letter, we present both experimental and theoretical investigations on the
dielectric constant of fewlayer In2Se3 nanoflakes grown on mica substrates by
van der Waals epitaxy. A nondestructive microwave impedance microscope is
employed to simultaneously quantify the number of layers and local electrical
properties. The measured dielectric constant increases monotonically as a
function of the thickness and saturates to the bulk value at around 6 ~ 8
quintuple layers. The same trend of layerdependent dielectric constant is also
revealed by firstprinciple calculations. Our results of the dielectric
response, being ubiquitously applicable to layered 2D semiconductors, are
expected to be significant for this vibrant research field.

Interfaces between exfoliated topological insulator Bi2Se3 and several
transition metals deposited by sputtering were studied by XPS, SIMS, UPS and
contact IV measurements. Chemically clean interfaces can be achieved when
coating Bi2Se3 with a transition metal layer as thin as 1 nm, even without
capping. Most interestingly, UPS spectra suggest depletion or inversion in the
originally ntype topological insulator near the interface. Strong band bending
in the topological insulator requires careful material engineering or electric
biasing if one desires to make use of the spin locking in surface states in the
bulk gap for potential spintronic applications

The transferfree synthesis of highquality, largearea graphene on a given
dielectric substrate, which is highly desirable for device applications,
remains a significant challenge. In this paper, we report on a simple rapid
thermal treatment method for the fast and direct growth of highquality,
largescale monolayer graphene on a SiO2/Si substrate from solid carbon
sources. The stack structure of solid carbon layer/copper film/SiO2 is adopted
in the RTT process. The inserted copper film does not only act as an active
catalyst for the carbon precursor but also serves as a "filter" that prevents
premature carbon dissolution, and thus, contributes to monolayer graphene
growth on SiO2/Si. The produced monolayer graphene exhibits high carrier
mobility of up to 3000 cm2 V1s1 at room temperature and standard halfinteger
quantum oscillations.

The general relativistic perturbations of scalartensor theories (STT) of
gravity are studied in a manifestly gauge invariant Hamiltonian formalism.
After the derivation of the Hamiltonian equations of motion in this framework,
the gauge invariant formalism is used to compute the evolution equations of
linear perturbations around a general relativistic spacetime background in the
Jordan frame. These equations are then specialized to the case of a flat FRW
cosmological background. Furthermore, the equivalence between the Jordan frame
and the Einstein frame of STT in the manifestly gauge invariant Hamiltonian
formalism is analyzed, and it is shown that also in this framework they can be
related by a conformal transformation. Finally, the obtained evolution
equations for the linear perturbations in our formalism are compared with those
in the standard cosmological perturbation theory. It turns out that the
perturbation equations in the two different formalisms coincide with each other
in a suitable limit.

Twodimensional (2D) materials, such as graphene and transition metal
dichalcogenides have attracted great attention because of the rich physics and
potential applications in nextgeneration nanosized electronic devices.
Recently, atomically thin black phosphorus (BP) has become a new member of the
2D materials family with high theoretical mobility and tunable bandgap
structure. However, degradation of properties under atmospheric conditions and
highdensity charge traps in BP have largely limited its mobility (~400 cm2/Vs
at room temperature) and thus restricted its future applications. Here, we
report the fabrication of stable BNBPBN heterostructures by encapsulating
atomically thin BP between hexagonal boron nitride (BN) layers to realize
ultraclean BNBP interfaces which allow a recordhigh fieldeffect mobility
~1350 cm2/Vs at room temperature and onoff ratios over 10^5. At low
temperatures, the mobility reaches ~2700 cm2/Vs and quantum oscillations in BP
2D hole gas are observed at low magnetic fields. Importantly, the BNBPBN
heterostructure can effectively avoid the quality degradation of BP in ambient
condition.

We demonstrate that surface relaxation, which is insignificant in trilayer
graphene, starts to manifest in Bernalstacked tetralayer graphene.
Bernalstacked fewlayer graphene has been investigated by analyzing its Landau
level spectra through quantum capacitance measurements. We find that in
trilayer graphene, the interlayer interaction parameters were similar to that
of graphite. However, in tetralayer graphene, the hopping parameters between
the bulk and surface bilayers are quite different. This shows a direct evidence
for the surface relaxation phenomena. In spite of the fact that the Van der
Waals interaction between the carbon layers is thought to be insignificant, we
suggest that the interlayer interaction is an important factor in explaining
the observed results and the symmetrybreaking effects in graphene sublattice
are not negligible.

Highquality BNGrapheneBN nanoribbon capacitors with double sidegates of
graphene are experimentally realized. Graphene electronic properties can be
significantly modulated by the double sidegates. The modulation effects are
very obvious and followed the metallic electrode behavior of numerical
simulations, while the theoretically predicted negative quantum capacitance was
not observed, possibility due to the overestimated or weakened interactions
between the graphene nanoribbon and sidegate electrodes.

The metalinsulator transition (MIT) is one of the remarkable electrical
transport properties of atomically thin molybdenum disulphide (MoS2). Although
the theory of electronelectron interactions has been used in modeling the MIT
phenomena in MoS2, the underlying mechanism and detailed MIT process still
remain largely unexplored. Here, we demonstrate that the vertical
metalinsulatorsemiconductor (MIS) heterostructures built from atomically thin
MoS2 (monolayers and multilayers) are ideal capacitor structures for probing
the electron states in MoS2. The vertical configuration of MIS heterostructures
offers the added advantage of eliminating the influence of large impedance at
the band tails and allows the observation of fully excited electron states near
the surface of MoS2 over a wide excitation frequency (100 Hz1 MHz) and
temperature range (2 K 300 K). By combining capacitance and transport
measurements, we have observed a percolationtype MIT, driven by density
inhomogeneities of electron states, in the vertical heterostructures built from
monolayer and multilayer MoS2. In addition, the valence band of thin MoS2
layers and their intrinsic properties such as thicknessdependence screening
abilities and band gap widths can be easily accessed and precisely determined
through the vertical heterostructures.

The scalartensor theories of gravity in spacetime dimensions $D+1>2$ are
studied. By doing Hamiltonian analysis, we obtain the geometrical dynamics of
the theories from their Lagrangian. The Hamiltonian formalism indicates that
the theories are naturally divided into two sectors by the coupling parameter
$\omega$. The Hamiltonian structure in both sectors are similar to the
corresponding structure of 4dimensional cases. It turns out that there is a
symplectic reduction from the canonical structure of $so(D+1)$ YangMills
theories coupled to the scalar field to the canonical structure of the
geometrical scalartensor theories. Therefore the nonperturbative loop quantum
gravity techniques can also be applied to the scalartensor theories in $D+1$
dimensions based on their connectiondynamical formalism.

A firstorder action for scalartensor theories of gravity is proposed. The
Hamiltonian analysis of the action gives the desired connection dynamical
formalism, which was derived from the geometrical dynamics by canonical
transformations. It is shown that this connection formalism in Jordan frame is
equivalent to the alternative connection formalism in Einstein frame.
Therefore, the action principle underlying loop quantum scalartensor theories
is recovered.

In this work, we show that in a fourquantumdot ring, via introducing a
local Rashba spinorbit interaction the spin bias in the transverse terminals
can be detected by observing the charge currents in the longitudinal probes. It
is found that due to the Rashba interaction, the quantum interference in this
system becomes spindependent and the oppositespin currents induced by the
spin bias can present different magnitudes, so charge currents emerge. Besides,
the charge currents rely on both the magnitude and spin polarization direction
of the spin bias. It is believed that this method provides an electrical but
practical scheme to detect the spin bias (or the spin current).

The impurityrelated electron transport through a double quantum dot (QD)
AharonovBohm (AB) interferometer is theoretically studied, by considering
impurities coupled to the QDs in the interferometer arms. When investigating
the linear conductance spectra \emph{vs} the impurity levels, we show that the
impurities influence the electron transport in a nontrivial way, since their
suppressing or enhancing the electron tunneling. A presented singlelevel
impurity leads to the appearance of Fano lineshapes in the conductance spectra
in the absence of magnetic flux, with the positions of Fano antiresonances
determined by both the impurityQD couplings and the QD levels separated from
the Fermi level, whereas when a magnetic flux is introduced with the the phase
factor $\phi=\pi$ the impuritydriven BreitWigner lineshapes appear in the
conductance curves. Besides, the nonlocal impurities alter the period of
conductance change \emph{vs} the magnetic flux. The multilevel impurities
indeed complicate the electron transport, but for the cases of two identical
local impurities coupled to the respective QDs with uniform couplings or a
nonlocal impurity coupled to both QDs uniformly, the antiresonances are only
relevant to the impurity levels. When manybody effect is managed within the
secondorder approximation, we also find the important role of the Coulomb
interaction in modifying the electron transport.

Electron transport through a threeelectrode triplequantumdot ring with the
source electrode of spindependent splitting of chemical potentials (spin bias)
is theoretically investigated. We find clear charge and spin currents in the
drain electrodes driven by the spin bias, despite the absence of charge bias
between the source and drain electrodes, and their directions and amplitudes
can be adjusted by altering the structure parameters or magnetic field. The
distinct characteristics of spinbias driven persistent charge and spin
currents in the ring are also shown. When an appropriate charge bias is
applied, the singlespin electron motion can be achieved in this structure.

Electronic transport through a quantum dot chain embodied in an AharonovBohm
interferometer is theoretically investigated. In such a system, it is found
that only for the configurations with the samenumbered quantum dots
sidecoupled to the quantum dots in the arms of the interferometer, some
molecular states of the quantum dot chain decouple from the leads. Namely, in
the absence of magnetic flux all odd molecular states decouple from the leads,
but all even molecular states decouple from the leads when an appropriate
magnetic flux is introduced. Interestingly, the antiresonance position in the
electron transport spectrum is independent of the change of the decoupled
molecular states. In addition, when considering the manybody effect within the
secondorder approximation, we show that the emergence of decoupling gives rise
to the apparent destruction of electronhole symmetry. By adjusting the
magnetic flux through either subring, some molecular states decouple from one
lead but still couple to the other, and then some new antiresonances occur.