
The temperature dependence of the inplane magnetic penetration depth
($\lambda_{ab}$) in an extensively characterized sample of superconducting
CaKFe$_4$As$_4$ ($T_{\rm c}\simeq35$ K) was investigated using muonspin
rotation ($\mu$SR). A comparison of $\lambda_{ab}^{2}(T)$ measured by $\mu$SR
with the one inferred from ARPES data confirms the presence of multiple gaps at
the Fermi level. An agreement between $\mu$SR and ARPES requires the presence
of additional bands, which are not resolved by ARPES experiments. These bands
are characterized by small supercondcting gaps with an average zerotemperature
value of $\Delta_{0} =$ 2.4(2) meV. Our data suggest that in CaKFe$_4$As$_4$
the $s^\pm$ order parameter symmetry acquires a more sophisticated form by
allowing a sign change not only between electron and hole pockets, but also
within pockets of similar type.

The recently discovered material PtSn$_4$ is known to exhibit extremely large
magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface.
PdSn$_4$ is isostructure to PtSn$_4$ with same electron count. We report on the
physical properties of high quality single crystals of PdSn$_4$ including
specific heat, temperature and magnetic field dependent resistivity and
magnetization, and electronic band structure properties obtained from angle
resolved photoemission spectroscopy (ARPES). We observe that PdSn$_4$ has
physical properties that are qualitatively similar to those of PtSn$_4$, but
find also pronounced differences. Importantly, the Dirac arc node surface state
of PtSn$_4$ is gapped out for PdSn$_4$. By comparing these similar compounds,
we address the origin of the extremely large magnetoresistance in PdSn$_4$ and
PtSn$_4$; based on detailed analysis of the magnetoresistivity, $\rho(H,T)$, we
conclude that neither carrier compensation nor the Dirac arc node surface state
are primary reason for the extremely large magnetoresistance. On the other
hand, we find that surprisingly Kohler's rule scaling of the
mangnetoresistance, which describes a selfsimilarity of the field induced
orbital electronic motion across different length scales and is derived for a
simple electronic response of metals to applied in a magnetic field is obeyed
over the full range of temperatures and field strengths that we explore.

We study structural and electronic properties of graphene grown on SiC
substrate using scanning tunneling microscope (STM), spotprofileanalysis low
energy electron diffraction (SPALEED) and angle resolved photoemission
spectroscopy (ARPES). We find several new replicas of Dirac cones in the
Brillouin zone (BZ). Their locations can be understood in terms of combination
of basis vectors linked to SiC 6x6 and graphene 6xsqrt(3) x 6sqrt(3)
reconstruction. Therefore these new features originate from the Moie caused by
the lattice mismatch between SiC and graphene. More specifically, Dirac cones
replicas are caused by underlying weak modulation of the ionic potential by the
substrate that is then experienced by the electrons in the graphene. We also
demonstrate that this effect is equally strong in single and trilayer
graphene, therefore the additional Dirac cones are intrinsic features rather
than result of photoelectron diffraction. These new features in the electronic
structure are very important for the interpretation of recent transport
measurements and can assist in tuning the properties of graphene for practical
applications.

We use high resolution angleresolved photoemission spectroscopy (ARPES) and
electronic structure calculations to study the electronic properties of
rareearth monoantimonides RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu). The
experimentally measured Fermi surface (FS) of RSb consists of at least two
concentric hole pockets at the $\Gamma$ point and two intersecting electron
pockets at the $X$ point. These data agree relatively well with the electronic
structure calculations. Detailed photon energy dependence measurements using
both synchrotron and laser ARPES systems indicate that there is at least one
Fermi surface sheet with strong threedimensionality centered at the $\Gamma$
point. Due to the "lanthanide contraction", the unit cell of different
rareearth monoantimonides shrinks when changing rareearth ion from CeSb to
LuSb. This results in the differences in the chemical potentials in these
compounds, which is demonstrated by both ARPES measurements and electronic
structure calculations. Interestingly, in CeSb, the intersecting electron
pockets at the $X$ point seem to be touching the valence bands, forming a
fourfold degenerate Diraclike feature. On the other hand, the remaining
rareearth monoantimonides show significant gaps between the upper and lower
bands at the $X$ point. Furthermore, similar to the previously reported results
of LaBi, a Diraclike structure was observed at the $\Gamma$ point in YSb,
CeSb, and GdSb, compounds showing relatively high magnetoresistance. This
Diraclike structure may contribute to the unusually large magnetoresistance in
these compounds.

Given the importance of crystal symmetry for the emergence of topological
quantum states, we have studied, as exemplified in NbNiTe2, the interplay of
crystal symmetry, atomic displacements (lattice vibration), band degeneracy,
and band topology. For NbNiTe2 structure in space group 53 (Pmna)  having an
inversion center arising from two glide planes and one mirror plane with a
2fold rotation and screw axis  a full gap opening exists between two band
manifolds near the Fermi energy. Upon atomic displacements by optical phonons,
the symmetry lowers to space group 28 (Pma2), eliminating one glide plane along
c, the associated rotation and screw axis, and the inversion center. As a
result, twenty Weyl points emerge, including four typeII Weyl points in the
GX direction at the boundary between a pair of adjacent electron and hole
bands. Thus, optical phonons may offer control of the transition to a Weyl
fermion state.

We use temperature and fielddependent resistivity measurements
[Shubnikovde Haas (SdH) quantum oscillations] and ultrahigh resolution,
tunable, vacuum ultraviolet (VUV) laserbased angleresolved photoemission
spectroscopy (ARPES) to study the threedimensionality (3D) of the bulk
electronic structure in WTe2, a typeII Weyl semimetal. The bulk Fermi surface
(FS) consists of two pairs of electron pockets and two pairs of hole pockets
along the XGammaX direction as detected by using an incident photon energy of
6.7 eV, which is consistent with the previously reported data. However, if
using an incident photon energy of 6.36 eV, another pair of tiny electron
pockets is detected on both sides of the Gamma point, which is in agreement
with the small quantum oscillation frequency peak observed in the
magnetoresistance. Therefore, the bulk, 3D FS consists of three pairs of
electron pockets and two pairs of hole pockets in total. With the ability of
fine tuning the incident photon energy, we demonstrate the strong
threedimensionality of the bulk electronic structure in WTe2. The combination
of resistivity and ARPES measurements reveal the complete, and consistent,
picture of the bulk electronic structure of this material.

Systematic measurements of temperature dependent magnetization, resistivity
and angleresolved photoemission spectroscopy (ARPES) at ambient pressure as
well as resistivity under pressures up to 5.25 GPa were conducted on single
crystals of CrAuTe$_4$. Magnetization data suggest that magnetic moments are
aligned antiferromagnetically along the crystallographic $c$axis below
$T_\textrm{N}$ = 255 K. ARPES measurements show band reconstruction due to the
magnetic ordering. Magnetoresistance data show clear anisotropy, and, at high
fields, quantum oscillations. The Neel temperature decreases monotonically
under pressure, decreasing to $T_\textrm{N}$ = 236 K at 5.22 GPa. The pressure
dependencies of (i) $T_\textrm{N}$, (ii) the residual resistivity ratio, and
(iii) the size and powerlaw behavior of the low temperature magnetoresistance
all show anomalies near 2 GPa suggesting that there may be a phase transition
(structural, magnetic, and/or electronic) induced by pressure. For pressures
higher than 2 GPa a significantly different quantum oscillation frequency
emerges, consistent with a pressure induced change in the electronic states.

We use our high resolution Helamp based, tunable laserbased ARPES
measurements and density functional theory calculations to study the electronic
properties of LaBi, a binary system that was proposed to be a member of a new
family of topological semimetals. Both bulk and surface bands are present in
the spectra. The dispersion of the surface state is highly unusual. It
resembles a Dirac cone, but upon closer inspection we can clearly detect an
energy gap. The bottom band follows roughly a parabolic dispersion. The
dispersion of the top band remains very linear, "V" shape like, with the tip
approaching very closely to the extrapolated location of Dirac point. Such
asymmetric mass acquisition is highly unusual and opens a possibility of a new
topological phenomena that has yet to be understood.

We use high resolution angle resolved photoemission spectroscopy and density
functional theory with experimentally obtained crystal structure parameters to
study the electronic properties of CaKFe4As4. In contrast to related CaFe2As2
compounds, CaKFe4As4 has high Tc of 35K at stochiometric composition. This
presents unique opportunity to study properties of high temperature
superconductivity of iron arsenic superconductors in absence of doping or
substitution. The Fermi surface consists of three hole pockets at $\Gamma$ and
two electron pockets at the $M$ point. We find that the values of the
superconducting gap are nearly isotropic, but significantly different for each
of the FS sheets. Most importantly we find that the overall momentum dependence
of the gap magnitudes plotted across the entire Brillouin zone displays a
strong deviation from the simple cos(kx)cos(ky) functional form of the gap
function, proposed in the scenario of the Cooperpairing driven by a short
range antiferromagnetic exchange interaction. Instead, the maximum value of the
gap is observed for FS sheets that are closest to the ideal nesting condition
in contrast to the previous observations in some other ferropnictides. These
results provide strong support for the multiband character of superconductivity
in CaKFe4As4, in which Cooper pairing forms on the electron and the hole bands
interacting via dominant interband repulsive interaction, enhanced by FS
nesting}.

It has recently been proposed that electronic band structures in crystals
give rise to a previously overlooked type of Weyl fermion, which violates
Lorentz invariance and, consequently, is forbidden in particle physics. It was
further predicted that Mo$_x$W$_{1x}$Te$_2$ may realize such a Type II Weyl
fermion. One crucial challenge is that the Weyl points in Mo$_x$W$_{1x}$Te$_2$
are predicted to lie above the Fermi level. Here, by studying a simple model
for a Type II Weyl cone, we clarify the importance of accessing the unoccupied
band structure to demonstrate that Mo$_x$W$_{1x}$Te$_2$ is a Weyl semimetal.
Then, we use pumpprobe angleresolved photoemission spectroscopy (pumpprobe
ARPES) to directly observe the unoccupied band structure of
Mo$_x$W$_{1x}$Te$_2$. For the first time, we directly access states $> 0.2$ eV
above the Fermi level. By comparing our results with $\textit{ab initio}$
calculations, we conclude that we directly observe the surface state containing
the topological Fermi arc. Our work opens the way to studying the unoccupied
band structure as well as the timedomain relaxation dynamics of
Mo$_x$W$_{1x}$Te$_2$ and related transition metal dichalcogenides.

We use ultrahigh resolution, tunable, vacuum ultraviolet laser angleresolved
photoemission spectroscopy (ARPES) to study the electronic properties of
WTe$_2$, a material that was predicted to be a typeII Weyl semimetal. The Weyl
fermion states in WTe2 were proposed to emerge at the crossing points of
electron and hole pockets; and Fermi arcs connecting electron and hole pockets
would be visible in the spectral function on (001) surface. Here we report the
observation of such Fermi arcs in WTe2 confirming the theoretical predictions.
This provides strong evidence for typeII Weyl semimetallic states in WTe2.

In a type I Dirac or Weyl semimetal, the low energy states are squeezed to a
single point in momentum space when the chemical potential Ef is tuned
precisely to the Dirac/Weyl point. Recently, a type II Weyl semimetal was
predicted to exist, where the Weyl states connect hole and electron bands,
separated by an indirect gap. This leads to unusual energy states, where hole
and electron pockets touch at the Weyl point. Here we present the discovery of
a type II topological Weyl semimetal (TWS) state in pure MoTe2, where two sets
of WPs (W2+, W3+) exist at the touching points of electron and hole pockets
and are located at different binding energies above Ef. Using ARPES, modeling,
DFT and calculations of Berry curvature, we identify the Weyl points and
demonstrate that they are connected by different sets of Fermi arcs for each of
the two surface terminations. We also find new surface "track states" that form
closed loops and are unique to type II Weyl semimetals. This material provides
an exciting, new platform to study the properties of Weyl fermions.

In topological quantum materials the conduction and valence bands are
connected at points (Dirac/Weyl semimetals) or along lines (Line Node
semimetals) in the momentum space. Numbers of studies demonstrated that several
materials are indeed Dirac/Weyl semimetals. However, there is still no
experimental confirmation of materials with line nodes, in which the Dirac
nodes form closed loops in the momentum space. Here we report the discovery of
a novel topological structure  Dirac node arcs  in the ultrahigh
magnetoresistive material PtSn4 using laserbased angleresolved photoemission
spectroscopy (ARPES) data and density functional theory (DFT) calculations.
Unlike the closed loops of line nodes, the Dirac node arc structure resembles
the Dirac dispersion in graphene that is extended along one dimension in
momentum space and confined by band gaps on either end. We propose that this
reported Dirac node arc structure is a novel topological state that provides a
novel platform for studying the exotic properties of Dirac Fermions.

We investigate the effect of isotope substitution on the electronphonon
interaction in the multiband superconductor MgB2 using tunable laser based
Angle Resolved Photoemission Spectroscopy. The kink structure around 70 meV in
the $\sigma$ band, which is caused by electron coupling to the E2g phonon mode,
is shifted to higher binding energy by ~3.5 meV in Mg(10)B2 and the shift is
not affected by superconducting transition. These results serve as the
benchmark for investigations of isotope effects in known, unconventional
superconductors and newly discovered superconductors where the origin of
pairing is unknown.

We use Angle Resolved Photoemission Spectroscopy (ARPES), Raman spectroscopy,
Low Energy Electron Diffraction (LEED) and xray scattering to reveal an
unusual electronically mediated charge density wave (CDW) in K0.9Mo6O17. Not
only does K0.9Mo6O17 lack signatures of electronphonon coupling, but it also
hosts an extraordinary surface CDW, with TS CDW =220 K nearly twice that of the
bulk CDW, TB CDW =115 K. While the bulk CDW has a BCSlike gap of 12 meV, the
surface gap is ten times larger and well in the strong coupling regime. Strong
coupling behavior combined with the absence of signatures of strong
electronphonon coupling indicates that the CDW is likely mediated by
electronic interactions enhanced by low dimensionality.

Weyl semimetals have sparked intense research interest, but experimental work
has been limited to the TaAs family of compounds. Recently, a number of
theoretical works have predicted that compounds in the Mo$_x$W$_{1x}$Te$_2$
series are Weyl semimetals. Such proposals are particularly exciting because
Mo$_x$W$_{1x}$Te$_2$ has a quasi twodimensional crystal structure wellsuited
to many transport experiments, while WTe$_2$ and MoTe$_2$ have already been the
subject of numerous proposals for device applications. However, with available
ARPES techniques it is challenging to demonstrate a Weyl semimetal in
Mo$_x$W$_{1x}$Te$_2$. According to the predictions, the Weyl points are above
the Fermi level, the system approaches two critical points as a function of
doping, there are many irrelevant bulk bands, the Fermi arcs are nearly
degenerate with bulk bands and the bulk band gap is small. Here, we study
Mo$_x$W$_{1x}$Te$_2$ for $x = 0.07$ and 0.45 using pumpprobe ARPES. The
system exhibits a dramatic response to the pump laser and we successfully
access states $> 0.2$eV above the Fermi level. For the first time, we observe
direct, experimental signatures of Fermi arcs in Mo$_x$W$_{1x}$Te$_2$, which
agree well with theoretical calculations of the surface states. However, we
caution that the interpretation of these features depends sensitively on free
parameters in the surface state calculation. We comment on the prospect of
conclusively demonstrating a Weyl semimetal in Mo$_x$W$_{1x}$Te$_2$.

The combination of highquality Al2O3 dielectric and thiol chemistry
passivation can effectively reduce the density of interface traps and Coulomb
impurities of WS2, leading to a significant improvement of the mobility and a
transition of the charge transport from the insulating to the metallic regime.
A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature
(low temperature) for monolayer WS2. A theoretical model for electron transport
is also developed.

We show that by combining highk dielectric substrate and high density of
charge carriers, Coulomb impurity can be effectively screened, leading to an
unprecedented roomtemperature mobility of ~150cm2/Vs in monolayer MoS2. The
high sample quality enables us to quantitatively extract the mobility
components limited by Coulomb impurities, intrinsic and surface optical
phonons, and study their scaling with temperature, carrier density and
dielectric constant. The excellent agreement between our theoretical analysis
and experimental data demonstrates unambiguously that roomtemperature
phononlimited transport is achieved in monolayer MoS2, which is a necessary
factor for electronic device applications.

We report the discovery of Weyl semimetal NbAs featuring topological Fermi
arc surface states.

We use ultrahigh resolution, tunable, VUV laserbased, angleresolved
photoemission spectroscopy (ARPES) and temperature and field dependent
resistivity and thermoelectric power (TEP) measurements to study the electronic
properties of WTe2, a compound that manifests exceptionally large, temperature
dependent magnetoresistance. The temperature dependence of the TEP shows a
change of slope at T=175 K and the Kohler rule breaks down above 70140 K
range. The Fermi surface consists of two electron pockets and two pairs of hole
pockets along the XGammaX direction. Upon increase of temperature from 40K,
the hole pockets gradually sink below the chemical potential. Like BaFe2As2,
WTe2 has clear and substantial changes in its Fermi surface driven by modest
changes in temperature. In WTe2, this leads to a rare example of temperature
induced Lifshitz transition, associated with the complete disappearance of the
hole pockets. These dramatic changes of the electronic structure naturally
explain unusual features of the transport data.

A 1D model is developed for defective gap mode (DGM) with two types of
boundary conditions: conducting mesh and conducting sleeve. For a periodically
modulated system without defect, the normalized width of spectral gaps equals
to the modulation factor, which is consistent with previous studies. For a
periodic system with local defects introduced by the boundary conditions, it
shows that the conductingmeshinduced DGM is always well confined by spectral
gaps while the conductingsleeveinduced DGM is not. The defect location can be
a useful tool to dynamically control the frequency and spatial periodicity of
DGM inside spectral gaps. This controllability can be applied to optical
microcavities and waveguides in photonic crystals and the interaction between
gap eigenmodes and energetic particles in fusion plasmas.

Results of Xband microwave surface impedance measurements of FeSe1xTex very
thin film are reported. The effective surface resistance shows appearance of
peak at T less and near Tc when plotted as function of temperature. The authors
suggests that the most wellreasoned explanation can be based on the idea of
the changing orientation of the microwave magnetic field at a SN phase
transition near the surface of a very thin film. The magnetic penetration depth
exhibits a powerlaw behavior of delta lambda proportional to T with an
exponent n = 2.4 at low temperatures, which is noticeably higher than in the
published results on FeSe1xTexsingle crystal. However the temperature
dependence of the superfluid conductivity remains very different from the
behavior described by the BCS theory. Experimental results are fitted very well
by a twogap model with delta1/kTc=0.43 and delta2/kTc=1.22,thus supporting
s(+) wave symmetry. The rapid increase of the quasiparticle scattering time
is obtained from the microwave impedance measurements.

We have developed an angleresolved photoemission spectrometer with tunable
VUV laser as a photon source. The photon source is based on the fourth harmonic
generation of a near IR beam from a Ti:sapphire laser pumped by a CW green
laser and tunable between 5.3eV and 7eV. The most important part of the setup
is a compact, vacuum enclosed fourth harmonic generator based on KBBF crystals,
grown hydrothermally in the US. This source can deliver a photon flux of over
10^14 photons/s. We demonstrate that this energy range is sufficient to measure
the kz dispersion in an iron arsenic high temperature superconductor, which was
previously only possible at synchrotron facilities.