
We report complex band structure (CBS) calculations for the four late
transition metal monoxides, MnO, FeO, CoO and NiO, in their paramagnetic phase.
The CBS is obtained from density functional theory plus dynamical mean field
theory (DMFT) calculations to take into account correlation effects. The
socalled $\beta$ parameters, governing the exponential decay of the
transmission probability in the nonresonant tunneling regime of these oxides,
are extracted from the CBS. Different model constructions are examined in the
DMFT part of the calculation. The calculated $\beta$ parameters provide
theoretical estimation for the decay length in the evanescent channel, which
would be useful for tunnel junction applications of these materials.

The vertical configuration is a powerful tool recently developed
experimentally to investigate field effects in quasi 2D systems. Prototype
graphenebased vertical tunneling transistors can achieve an extraordinary
control over current density utilizing gate voltages. In this work we study
theoretically vertical tunneling junctions that consist of a monolayer of
photoswitchable arylazobenzene molecules of sandwiched between two sheets of
graphene. Azobenzene molecules transform between {\it trans} and {\it cis}
conformations upon photoexcitation, thus adding a second knob that enhances
control over physical properties of the junction. Using firstprinciples
methods within the density functional framework, we perform simulations with
the inclusion of field effects for both {\it trans} and {\it cis}
configurations. We find that the interference of interface states resulting
from moleculegraphene interactions at the Fermi energy introduces a dualpeak
pattern in the transmission functions and dominates the transport properties of
gate junctions, shedding new light on interfacial processes.

Transition metal dichalcogenides (TMDCs), with their twodimensional
structures and sizable bandgaps, are good candidates for barrier materials in
tunneling fieldeffect transistor (TFET) formed from atomic precision vertical
stacks of graphene and insulating crystals of a few atomic layers in thickness.
We report firstprinciples study of the electronic properties of the
Graphene/WS$_2$/Graphene sandwich structure revealing strong interface effects
on dielectric properties and predicting a high ON/OFF ratio with an appropriate
WS$_2$ thickness and a suitable range of the gate voltage. Both the band
spinorbit coupling splitting and the dielectric constant of the WS$_2$ layer
depend on its thickness when in contact with the graphene electrodes,
indicating strong influence from graphene across the interfaces. The dielectric
constant is significantly reduced from the bulk WS$_2$ value. The effective
barrier height varies with WS$_2$ thickness and can be tuned by a gate voltage.
These results are critical for future nanoelectronic device designs.

The existence of ferroelectricity in {$\mathrm{BiMnO}_3$} has been a
longstanding question for both experimentalists and theorists. In addition to
a highly distorted bulk structure, the ionic crystal planes cause a large
roughness in thin films that makes it extremely difficult to nail down the
physical mechanisms underlying a possible ferroelectricferromagnetic phase. We
approach the problem by including the substrate explicitly to study the
polarization. With this model, we investigate mono, di, and trilayer
{$\mathrm{BiMnO}_3$} thin films on $\mathrm{SrTiO}_3$ substrates. We find that
thin film systems have both strong ferromagnetism and strong ferroelectricity.
Substrate constraints weaken the competition between displacements induced by
stereochemically active Bi$6s^2$ lone pairs and by JahnTeller distortions
around Mn ions found in the bulk, such that the sum of offcenter displacements
of Bi ions in bulk {$\mathrm{BiMnO}_3$} nearly cancel. In {$\mathrm{BiMnO}_3$}
thin films, in contrast, all Bi ions displace roughly in parallel, resulting in
a strongly polar structure. We also find spontaneous charge disproportionation
of Mn ion pairs in {$\mathrm{BiMnO}_3$} thin films.

The GW approximation is a wellknown method to improve electronic structure
predictions calculated within density functional theory. In this work, we have
implemented a computationally efficient GW approach that calculates central
properties within the Matsubaratime domain using the modified version of Elk,
the fullpotential linearized augmented plane wave (FPLAPW) package.
Continuouspole expansion (CPE), a recently proposed analytic continuation
method, has been incorporated and compared to the widely used Pade
approximation. Full crystal symmetry has been employed for computational
speedup. We have applied our approach to 18 wellstudied
semiconductors/insulators that cover a wide range of band gaps computed at the
levels of singleshot G0W0, partially selfconsistent GW0, and fully
selfconsistent GW (scGW). Our calculations show that G0W0 leads to band gaps
that agree well with experiment for the case of simple sp electron systems,
whereas scGW is required for improving the band gaps in 3d electron systems.
In addition, GW0 almost always predicts larger band gap values compared to
scGW, likely due to the substantial underestimation of screening effects. Both
the CPE method and Pade approximation lead to similar band gaps for most
systems except strontium titantate, suggesting further investigation into the
latter approximation is necessary for strongly correlated systems. Our computed
band gaps serve as important benchmarks for the accuracy of the Matsubaratime
GW approach.

We carry out a layerbylayer investigation to understand electron transport
across metalinsulatormetal junctions. Interfacial structures of junctions
were studied and characterized using firstprinciples density functional theory
within the generalized gradient approximation. We found that as a function of
the number of crystal layers the calculated transmission coefficients of
multilayer silicene junctions decay much slower than for BNbased junctions We
revisited the semiclassical Boltzmann theory of electronic transport and
applied to multilayer silicene and BNbased junctions. The calculated
resistance in the hightransmission regime is smaller than that provided by the
Landauer formula. As the thickness of the barrier increases, results from the
Boltzmann and the Landauer formulae converge. We provide a upper limit in the
transmission coefficient below which, the Landauer method becomes valid.
Quantitatively, when the transmission coefficient is lower than $ \sim 0.05 $
per channel, the error introduced by the Landauer formula for calculating the
resistance is negligible. In addition, we found that the resistance of a
junction is not entirely determined by the averaged transmission, but also by
the distribution of the transmission over the first Brillouin zone.

We improvise a novel approach to carry out firstprinciples simulations of
graphenebased vertical field effect tunneling transistors that consist of a
graphene$${\it h}BN$$graphene multilayer structure. Within the density
functional theory framework, we exploit the effective screening medium (ESM)
method to properly treat boundary conditions for electrostatic potentials and
investigate the effect of gate voltage. The distribution of free carriers and
the band structure of both top and bottom graphene layers are calculated
selfconsistently. The dielectric properties of {\it h}BN thin films
sandwiched between graphene layers are computed layerbylayer following the
theory of microscopic permittivity. We find that the permittivities of BN
layers are very close to that of crystalline {\it h}BN. The effect of
interface with graphene on the dielectric properties of {\it h}BN is weak,
according to an analysis on the interface charge redistribution.

For several years the electronic structure properties of the novel
twodimensional system silicene have been studied extensively. Electron
transport across metalsilicence junctions, however, remains relatively
unexplored. To address this issue, we developed and implemented a theoretical
framework that utilizes the tightbinding FisherLee relation to span
nonequilibrium Green's function (NEGF) techniques, the scattering method, and
semiclassical Boltzmann transport theory. Within this hybrid quantumclassical,
twoscale framework, we calculated transmission and reflection coefficients of
monolayer and bilayer AgsiliceneAg junctions using the NEGF method in
conjunction with density functional theory; derived and calculated the group
velocities; and computed resistance using the semiclassical Boltzmann
equation. We found that resistances of these junctions are $\sim${}$ 0.08 \fom$
for monolayer silicene junctions and $\sim${}$ 0.3 \fom$ for bilayer ones,
factors of $\sim$8 and $\sim$2, respectively, smaller than Sharvin resistances
estimated via the Landauer formalism.

We investigate the currently debated issue of the existence of the Dirac cone
in silicene on an Ag(111) surface, using firstprinciples calculations based on
density functional theory to obtain the band structure. By unfolding the band
structure in the Brillouin zone of a supercell to that of a primitive cell,
followed by projecting onto Ag and silicene subsystems, we demonstrate that the
Dirac cone in silicene on Ag(111) is destroyed. Our results clearly indicate
that the linear dispersions observed in both angularresolved photoemission
spectroscopy (ARPES) [P. Vogt et al, Phys. Rev. Lett. 108, 155501 (2012)] and
scanning tunneling spectroscopy (STS) [L. Chen et al, Phys. Rev. Lett. 109,
056804 (2012)] come from the Ag substrate and not from silicene.

By carefully choosing parameters and including more semicore orbitals as
valence electrons, we have constructed a high quality projected augmented wave
(PAW) dataset that yields results comparable to existing fullpotential
linearized augmented planewave calculations. The dataset was then applied to
BaFe$_2$As$_2$ to study the effects of different levels of structure
optimization, as well as different choices of exchangecorrelation functionals.
It is found that the LDA exchangecorrelation functional fails to find the
correct SDWAFM ground state under full optimization, while PBE
exchangecorrelation functional obtains the correct state but significantly
overestimates the magnetism. The electronic structure of the SDWAFM state is
not very sensitive to structure optimizations with the PBE exchangecorrelation
functional because the position of the As atoms are preserved under
optimizations. We further investigated the Ba atom diffusion process on the
BaFe$_2$As$_2$ surface using the nudged elastic bands (NEB) method. The Ba atom
was found to be stable above the center of the squares formed by the surface As
atoms, and a diffusion barrier of 1.2 eV was found. Our simulated STM image
suggests an ordered surface Ba atom structure, in agreement with Ref.